Preview of practice Function Of Current (i_ds) In Relation To Device Geometry (10.1.3) - Revisiting MOSFET - Part B
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Function of Current (I_DS) in Relation to Device Geometry

Practice - Function of Current (I_DS) in Relation to Device Geometry

Learning

Practice Questions

Test your understanding with targeted questions

Question 1 Easy

What does I_DS represent in a transistor?

💡 Hint: Think about where the current is coming from and going.

Question 2 Easy

What effect does decreasing the length of a device have on current?

💡 Hint: Remember the relationship between physical length and current flow.

4 more questions available

Interactive Quizzes

Quick quizzes to reinforce your learning

Question 1

What influences the current I_DS in a device?

Voltage only
Geometric parameters only
Voltage and device geometry

💡 Hint: Think about what is connected to the flow of current.

Question 2

True or False: A thicker oxide generally results in a higher current flow.

True
False

💡 Hint: Consider the restrictions imposed by thickness.

2 more questions available

Challenge Problems

Push your limits with advanced challenges

Challenge 1 Hard

Design a transistor that operates optimally with a fixed oxide thickness of 10 nm. Discuss how you would adjust other parameters to maximize current.

💡 Hint: Think about how you would balance dimensions with electrical characteristics.

Challenge 2 Hard

Given a length of 1 μm and a width of 0.5 μm, calculate the expected performance of a device with these dimensions and discuss how changes could impact current.

💡 Hint: Remember the formula for current and what parameters you can manipulate.

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Reference links

Supplementary resources to enhance your learning experience.