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Test your understanding with targeted questions related to the topic.
Question 1
Easy
What is DIBL?
π‘ Hint: Think about what happens when the drain voltage increases.
Question 2
Easy
Explain velocity saturation in simple terms.
π‘ Hint: How do the channel dimensions affect current flow?
Practice 4 more questions and get performance evaluation
Engage in quick quizzes to reinforce what you've learned and check your comprehension.
Question 1
What is the primary effect caused by reducing the channel length in MOSFETs?
π‘ Hint: Consider the challenges associated with smaller device dimensions.
Question 2
True or False: FinFET offers better control than traditional planar transistors.
π‘ Hint: Recall how the structure of FinFET impacts control over the channel.
Solve and get performance evaluation
Push your limits with challenges.
Question 1
A nanoscale MOSFET has a channel length reduction from 45nm to 20nm. Calculate how the threshold voltage would change using the DIBL equation: \( \Delta V_{th} \propto e^{-L/\lambda} \), assuming \( \lambda = 10nm \).
π‘ Hint: Focus on how the ratio of L and \\( \\lambda \\) influences the value.
Question 2
Explain how the design of high-frequency amplifiers must change due to the effects of velocity saturation in nanoscale devices.
π‘ Hint: Consider how linearity impacts amplifier design aspects such as bandwidth.
Challenge and get performance evaluation