Practice Nanoscale CMOS Challenges - 12.1.1 | 12. Advanced Topics in Analog Circuits and Network Theory | Analog Circuits
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Practice Questions

Test your understanding with targeted questions related to the topic.

Question 1

Easy

What is DIBL?

πŸ’‘ Hint: Think about what happens when the drain voltage increases.

Question 2

Easy

Explain velocity saturation in simple terms.

πŸ’‘ Hint: How do the channel dimensions affect current flow?

Practice 4 more questions and get performance evaluation

Interactive Quizzes

Engage in quick quizzes to reinforce what you've learned and check your comprehension.

Question 1

What is the primary effect caused by reducing the channel length in MOSFETs?

  • Increased threshold voltage
  • Decreased leakage current
  • Short-channel effects like DIBL

πŸ’‘ Hint: Consider the challenges associated with smaller device dimensions.

Question 2

True or False: FinFET offers better control than traditional planar transistors.

  • True
  • False

πŸ’‘ Hint: Recall how the structure of FinFET impacts control over the channel.

Solve and get performance evaluation

Challenge Problems

Push your limits with challenges.

Question 1

A nanoscale MOSFET has a channel length reduction from 45nm to 20nm. Calculate how the threshold voltage would change using the DIBL equation: \( \Delta V_{th} \propto e^{-L/\lambda} \), assuming \( \lambda = 10nm \).

πŸ’‘ Hint: Focus on how the ratio of L and \\( \\lambda \\) influences the value.

Question 2

Explain how the design of high-frequency amplifiers must change due to the effects of velocity saturation in nanoscale devices.

πŸ’‘ Hint: Consider how linearity impacts amplifier design aspects such as bandwidth.

Challenge and get performance evaluation