Practice - Nanoscale CMOS Challenges
Practice Questions
Test your understanding with targeted questions
What is DIBL?
💡 Hint: Think about what happens when the drain voltage increases.
Explain velocity saturation in simple terms.
💡 Hint: How do the channel dimensions affect current flow?
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Interactive Quizzes
Quick quizzes to reinforce your learning
What is the primary effect caused by reducing the channel length in MOSFETs?
💡 Hint: Consider the challenges associated with smaller device dimensions.
True or False: FinFET offers better control than traditional planar transistors.
💡 Hint: Recall how the structure of FinFET impacts control over the channel.
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Challenge Problems
Push your limits with advanced challenges
A nanoscale MOSFET has a channel length reduction from 45nm to 20nm. Calculate how the threshold voltage would change using the DIBL equation: \( \Delta V_{th} \propto e^{-L/\lambda} \), assuming \( \lambda = 10nm \).
💡 Hint: Focus on how the ratio of L and \\( \\lambda \\) influences the value.
Explain how the design of high-frequency amplifiers must change due to the effects of velocity saturation in nanoscale devices.
💡 Hint: Consider how linearity impacts amplifier design aspects such as bandwidth.
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Reference links
Supplementary resources to enhance your learning experience.