Practice Function of Current (I_DS) in Relation to Device Geometry - 10.1.3 | 10. Revisiting MOSFET - Part B | Analog Electronic Circuits - Vol 1
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10.1.3 - Function of Current (I_DS) in Relation to Device Geometry

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Learning

Practice Questions

Test your understanding with targeted questions related to the topic.

Question 1

Easy

What does I_DS represent in a transistor?

💡 Hint: Think about where the current is coming from and going.

Question 2

Easy

What effect does decreasing the length of a device have on current?

💡 Hint: Remember the relationship between physical length and current flow.

Practice 4 more questions and get performance evaluation

Interactive Quizzes

Engage in quick quizzes to reinforce what you've learned and check your comprehension.

Question 1

What influences the current I_DS in a device?

  • Voltage only
  • Geometric parameters only
  • Voltage and device geometry

💡 Hint: Think about what is connected to the flow of current.

Question 2

True or False: A thicker oxide generally results in a higher current flow.

  • True
  • False

💡 Hint: Consider the restrictions imposed by thickness.

Solve 2 more questions and get performance evaluation

Challenge Problems

Push your limits with challenges.

Question 1

Design a transistor that operates optimally with a fixed oxide thickness of 10 nm. Discuss how you would adjust other parameters to maximize current.

💡 Hint: Think about how you would balance dimensions with electrical characteristics.

Question 2

Given a length of 1 μm and a width of 0.5 μm, calculate the expected performance of a device with these dimensions and discuss how changes could impact current.

💡 Hint: Remember the formula for current and what parameters you can manipulate.

Challenge and get performance evaluation