10.2.1. Transition to I-V Characteristics

Try these first

1. 1.

   What does V_GS stand for?

   Hint

   Think about which voltage controls the gate in a transistor.

2. 2.

   What does I_DS represent?

   Hint

   Recall the flow direction in a transistor.

3. 3.

   What happens to I_DS when the width (W) is increased?

   • Increases
   • Decreases
   • Remains the same

   Hint

   Think about how width affects charge movement.

4. 4.

   T/F: Longer device length decreases current flow.

   • True
   • False

   Hint

   Recall how distance affects electron travel.

5. 5.

   If you have a transistor with a given W of 2 mm and L of 1 mm, explain how the I_DS would change if L is increased to 3 mm while W is unchanged.

   Hint

   Reflect on how distance affects current flow.

6. 6.

   Consider if the oxide thickness t_ox is halved. Predict the impact on I_DS and justify your reasoning.

   Hint

   Think about dielectric effects on electron behavior.