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This chapter focuses on the operation and analysis of multi-transistor amplifiers, specifically configurations involving composite transistors. It describes various circuit configurations like common collector (CC) and common emitter (CE), the advantages of using composite structures, and introduces essential performance metrics associated with these configurations. Additionally, it discusses the application of Darlington pairs and the distinctions between BJT and MOS circuits in amplifier design.
References
Lecture 57.pdfClass Notes
Memorization
What we have learnt
Final Test
Revision Tests
Term: Composite Transistor
Definition: A combination of multiple transistors operating together to enhance performance characteristics like input impedance and gain.
Term: Darlington Pair
Definition: A configuration of two transistors that increases the input impedance of the circuit, often used in operational amplifiers.
Term: Common Collector Configuration
Definition: A transistor configuration where the collector terminal is common to both input and output; known for high input impedance and low output impedance.
Term: Common Emitter Configuration
Definition: A transistor arrangement commonly used in amplifier designs; it offers high gain and is often followed by CC configuration to improve performance.
Term: Common Drain Configuration
Definition: Similar to common collector but used for MOSFETs, this configuration helps lower output resistance.