Practice Biases and Vertical Field - 11.2.1 | 11. Revisiting MOSFET (Contd.) | Analog Electronic Circuits - Vol 1
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Biases and Vertical Field

11.2.1 - Biases and Vertical Field

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Learning

Practice Questions

Test your understanding with targeted questions

Question 1 Easy

What does Vgs stand for?

💡 Hint: What voltage does the gate apply to the source?

Question 2 Easy

How does increasing W affect Ids?

💡 Hint: Think about how current relates to channel size.

4 more questions available

Interactive Quizzes

Quick quizzes to reinforce your learning

Question 1

What is Vds in a MOSFET?

Voltage between gate and source
Voltage between drain and source
The threshold voltage

💡 Hint: Consider the part of the MOSFET that drains current.

Question 2

True or False: Increasing Vth will increase Ids.

True
False

💡 Hint: Think about what it means to surpass a threshold.

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Challenge Problems

Push your limits with advanced challenges

Challenge 1 Hard

If you have a MOSFET where Vgs = 6V, Vth = 1V, and Vds = 4V, calculate Ids when k is 5. What changes if you increase L?

💡 Hint: Use the Ids formula and consider the effects of increasing resistance.

Challenge 2 Hard

Discuss the importance of device parameters in determining Ids when designing a circuit.

💡 Hint: Relate these factors to real-world circuit behaviors in MOSFETs.

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Reference links

Supplementary resources to enhance your learning experience.