Analog Electronic Circuits - Vol 1 | 11. Revisiting MOSFET (Contd.) by Abraham | Learn Smarter
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11. Revisiting MOSFET (Contd.)

This chapter explores the expression of current in MOSFETs as a function of various parameters such as channel width, length, and gate voltages. It discusses the influence of device characteristics on current flow and the significance of understanding the I-V characteristics including the triode and saturation regions. Key concepts of channel behavior during operation are examined to provide a foundational understanding of MOSFET behavior in electronic circuits.

Sections

  • 11.1

    Analog Electronic Circuits

    This section covers the fundamentals of MOSFET operation, focusing on the relationships between the applied voltages, channel dimensions, and current flow.

  • 11.1.1

    Prof. Pradip Mandal

    This section covers the characteristics and equations governing the behavior of MOSFETs, focusing on the current expressions derived from device parameters such as width, length, and applied voltages.

  • 11.1.2

    Department Of Electronics And Electrical Communication Engineering

    This section discusses the behavior and mathematics governing MOSFET current in relation to various parameters like width, length, and applied voltages.

  • 11.1.3

    Indian Institute Of Technology, Kharagpur

    This section covers the characteristics and expressions governing MOSFET operation, focusing on the current expressions and their dependencies on various parameters.

  • 11.1.4

    Lecture – 11

    The section discusses the characteristics and behavior of MOSFETs, focusing on the relationship between the drain-source current and biasing parameters.

  • 11.1.5

    Revisiting Mosfet (Contd.)

    This section explores the current expressions in MOSFETs as functions of various parameters, highlighting how channel conductivity and physical dimensions affect performance.

  • 11.2

    Expression Of The Current

    This section discusses the expression of current in MOSFETs as a function of channel dimensions and voltage parameters.

  • 11.2.1

    Biases And Vertical Field

    This section explores the relationship between biases, vertical fields, and current expressions in MOSFETs, detailing how different parameters affect conductivity and operational characteristics.

  • 11.2.2

    Proportionality To Device Parameters

    This section discusses the relationship between the drain-source current in MOSFETs and critical device parameters, including width, length, and applied voltages.

  • 11.2.3

    Combination Of Variables

    This section outlines how current in a MOSFET is influenced by various device parameters and voltage conditions.

  • 11.2.4

    Condition For Validity Of The Equation

    This section explores the conditions under which the current equation for MOSFETs remains valid, emphasizing the importance of bias voltages and device parameters.

  • 11.2.5

    Effect Of Increasing Voltage

    This section explores how varying voltage influences the current expression in MOSFETs, taking into account device parameters such as width, length, and geometric aspects.

  • 11.3

    Changes To Current Expression

    This section explores the mathematical expressions governing the current in MOSFETs as influenced by various parameters, detailing how dimensions, voltages, and device characteristics affect the current flowing through the device.

  • 11.3.1

    Considering Both Source And Drain

    This section discusses how current in a MOSFET is influenced by various parameters, particularly the voltages at the gate, source, and drain.

  • 11.3.2

    Average Effect On Conductivity

    This section describes how various parameters influence the conductivity in MOSFETs and the resultant effect on drain-source current.

  • 11.3.3

    Tapered Channel Strength

    This section discusses the relationship between current, channel dimensions, and applied voltages in MOSFETs, specifically focusing on channel conductivity characteristics.

  • 11.4

    Critical Voltage Effects

    This section discusses the impact of critical voltage on the behavior and current expression in MOSFET devices, focusing on channel formation and saturation effects.

  • 11.4.1

    Condition: V = V

    This section delves into the current expression in MOSFETs as a function of various voltage and length parameters, particularly focusing on the conditions that affect current flow.

  • 11.4.2

    Channel Disappearance

    The section discusses how the current in MOSFETs depends on various parameters, specifically focusing on the conditions leading to channel disappearance.

  • 11.4.3

    Current Flow Beyond Pinch Off

    This section explores the relationship between current flow in MOSFETs and various operational parameters, particularly during the pinch-off condition.

  • 11.5

    Channel Length Modulation

    Channel length modulation in MOSFETs refers to the effect where the effective channel length changes as the drain-source voltage varies, affecting the current flow.

  • 11.5.1

    Modification Of Length

    This section discusses the effects of channel length and width in MOSFETs on current characteristics and device performance.

  • 11.5.2

    Limitations And Continuity Conditions

    This section discusses the impact of device parameters like width, length, and applied voltages on the drain current of MOSFETs, emphasizing continuity conditions and limitations in performance.

  • 11.6

    Summary Of I-V Characteristics

    This section discusses the I-V characteristics of MOSFETs, explaining how the current is influenced by various voltage biases and parameters of the device.

  • 11.6.1

    Different Regions Of Operation

    This section discusses the current expression in MOSFETs and how it relates to device parameters and operating regions.

  • 11.6.2

    I-V Characteristics For N-Mosfet

    This section explores the I-V characteristics of n-MOSFETs, highlighting how current depends on various device parameters and voltages.

  • 11.6.3

    Graphical Representation

    This section explains the relationship between current, device parameters, and voltage in MOSFET circuits, emphasizing graphical representations of I-V characteristics.

  • 11.7

    Conclusion

    The conclusion summarizes the key aspects of MOSFET operation, including the I-V characteristics and the impact of device parameters on performance.

  • 11.7.1

    Overview Of The Module

    This section provides a comprehensive overview of MOSFET operation, highlighting key relationships of current in relation to various device parameters.

  • 11.7.2

    Next Steps For Pmos Transistors

    This section elaborates on the governing equations of the current flow in PMOS transistors and the relationship between various parameters affecting their performance.

References

Lecture 11.pdf

Class Notes

Memorization

What we have learnt

  • The expression of drain-sou...
  • The importance of the chann...
  • The relationship between de...

Final Test

Revision Tests