13.3. Numerical Problems

Try these first

1. 1.

   What is the threshold voltage (Vth) for a given MOSFET if VGS is 3V and ID is measurable?

   Hint

   Remember that Vth sets the minimum gate-to-source voltage for conduction.

2. 2.

   Identify the region of operation for a MOSFET with VGS = 3V and Vth = 1V.

   Hint

   Check if VGS exceeds Vth.

3. 3.

   What happens to ID when VGS significantly exceeds Vth in n-MOS?

   • ID increases linearly
   • ID becomes zero
   • ID remains constant

   Hint

   Visualize the I-V curve responding to VGS.

4. 4.

   True or False: The threshold voltage for p-MOS is always a positive value.

   • True
   • False

   Hint

   Think about how polarity works in different devices.

5. 5.

   Design a circuit using an n-MOSFET that can operate in both saturation and triode while changing inputs. Calculate the expected ID values at each state based on example conditions.

   Hint

   Ensure that VGS exceeds Vth and analyze how VDS influences ID.

6. 6.

   Compare and contrast a circuit that employs both n-MOS and p-MOS transistors. Create simulations to observe how each device's I-V characteristics affect overall current flow.

   Hint

   Visual comparisons can highlight the importance of polarity in MOSFET behavior.