Analog Electronic Circuits - Vol 1 | 8. Revisiting BJT Characteristics (Contd.) - Part A by Abraham | Learn Smarter
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8. Revisiting BJT Characteristics (Contd.) - Part A

This chapter critically examines the characteristics and operational principles of Bipolar Junction Transistors (BJTs), focusing on the junction currents and terminal currents in both forward and reverse bias conditions. The discussion integrates graphical interpretations of the I-V characteristics and emphasizes the influence of minority carrier concentration on the operation of BJTs. Overall, it consolidates theoretical concepts essential for understanding the behavior of BJTs in electronic circuits.

Sections

  • 8.1

    Analog Electronic Circuits

    This section revisits the characteristics of Bipolar Junction Transistors (BJTs), focusing on their I-V characteristics and junction current dynamics in various biasing conditions.

  • 8.1.1

    Prof. Pradip Mandal

    This section elaborates on the BJT characteristics and its I-V relationship, focusing on the junction currents and terminal currents.

  • 8.1.2

    Department Of Electronics And Electrical Communication Engineering

    This section continues the exploration of BJT characteristics, focusing on current and voltage characteristics in different operating regions.

  • 8.1.3

    Indian Institute Of Technology, Kharagpur

    This section revisits the characteristics and operational principles of Bipolar Junction Transistors (BJTs), focusing on current components and the implications of biasing.

  • 8.1.4

    Lecture - 08

    This section focuses on the BJT (Bipolar Junction Transistor) characteristics, current flow in BJTs under different biasing conditions, and the derivation of the I-V characteristics.

  • 8.1.5

    Revisiting Bjt Characteristic (Contd.)

    This section expands on the characteristics and operational principles of Bipolar Junction Transistors (BJTs), focusing on the current-voltage characteristics and the behavior of junctions in various biasing conditions.

  • 8.2

    Today's Discussion Plan

    This section introduces the key topics for today's discussion on BJT characteristics and their I-V equations.

  • 8.2.1

    Current Through P-N Junction In Isolated Condition

    This section discusses the behavior of current through a p-n junction under both forward and reverse bias conditions, focusing on the characteristics of bipolar junction transistors (BJTs).

  • 8.2.2

    Junction Current Of Bjt

    The section discusses the junction current of Bipolar Junction Transistors (BJT) by examining the I-V characteristics, operating principles, and the influence of biasing on junction currents.

  • 8.2.3

    Terminal Current Of The Bjt In Active Region

    This section dives into the terminal current of a BJT in its active region, explaining how junction currents contribute to base, collector, and emitter terminal currents.

  • 8.2.4

    Graphical Interpretation Of The I-V Characteristic

    This section focuses on the graphical interpretation of the I-V characteristics of BJTs, explaining how junction currents behave under different biasing conditions.

  • 8.2.5

    Equivalent Circuit Of The Bjt

    This section discusses the equivalent circuit of a Bipolar Junction Transistor (BJT), detailing its I-V characteristics and terminal currents.

  • 8.3

    Bjt Structure

    This section discusses the structure and operational principles of Bipolar Junction Transistors (BJTs), focusing on their junction configurations and I-V characteristics.

  • 8.3.1

    N-P-N Transistor Regions

    This section details the regions and operational principles of n-p-n transistors, focusing on their junction currents and characteristics in active regions.

  • 8.3.2

    Forward And Reverse Biasing

    This section discusses the concepts of forward and reverse biasing in transistors, focusing on the behavior of junctions in a BJT under different bias conditions.

  • 8.3.3

    Junction Characteristics

    This section discusses the junction characteristics of bipolar junction transistors (BJTs), focusing on their I-V characteristics and junction currents.

  • 8.4

    Minority Carrier Concentration

    This section covers the concept of minority carrier concentration in BJTs, detailing its significance in understanding junction currents and operational characteristics.

  • 8.4.1

    Exponential Change Of Minority Carrier Concentration

    This section explores the exponential change of minority carrier concentration in BJTs, focusing on junction behavior under different bias conditions.

  • 8.4.2

    Electrons And Holes Contribution

    The section discusses the contribution of electrons and holes in the behavior and characteristics of BJTs, particularly in relation to their I-V equations.

  • 8.4.3

    Injection And Recombination Currents

    This section examines the injection and recombination currents in BJTs, detailing how minority carrier concentration influences these currents and their role in determining the terminal currents.

  • 8.5

    Current Components

    This section revisits and consolidates the BJT I-V characteristic equations, focusing on the junction currents in an NPN transistor during active operation.

  • 8.5.1

    Junction Currents

    This section covers the behavior of junction currents in bipolar junction transistors (BJTs), focusing on their characteristics in forward and reverse bias conditions.

  • 8.5.2

    Base And Collector Terminal Currents

    This section explains the currents in base and collector terminals of a BJT, emphasizing the relationships among them in active mode.

  • 8.6

    Terminal Currents Consolidation

    This section consolidates the I-V characteristics of BJTs, focusing on the behavior of terminal currents and associated junction currents in the active region.

  • 8.6.1

    Exponential Dependency Of Current Components

    This section discusses the exponential relationships between various current components in a BJT and their dependencies on the operational voltages.

  • 8.6.2

    Base Current And Collector Current Expressions

    This section elaborates on the expressions for base and collector currents in a BJT, focusing on their dependence on the biasing conditions and minority carrier dynamics.

  • 8.6.3

    Construction And Operation Parameters

    This section explains the construction and operational principles of BJTs, focusing on their I-V characteristics and how they function in active regions.

  • 8.7

    Transistor Parameters

    This section covers the I-V characteristics of BJTs, focusing on the current flow in both forward and reverse bias conditions and the importance of collector and base currents.

  • 8.7.1

    Ratio Of Collector To Base Current (Β)

    This section covers the significance of the ratio of collector current to base current (β) in BJTs, explaining how it influences current amplification.

  • 8.7.2

    Emitter Current And Collector Current Ratio (Α)

    This section explores the relationship between the emitter current and collector current in a BJT, focusing on the ratio α, which is crucial for understanding the transistor's operating principles.

Class Notes

Memorization

What we have learnt

  • BJT characteristics include...
  • Minority carrier concentrat...
  • The exponential dependence ...

Final Test

Revision Tests