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This chapter critically examines the characteristics and operational principles of Bipolar Junction Transistors (BJTs), focusing on the junction currents and terminal currents in both forward and reverse bias conditions. The discussion integrates graphical interpretations of the I-V characteristics and emphasizes the influence of minority carrier concentration on the operation of BJTs. Overall, it consolidates theoretical concepts essential for understanding the behavior of BJTs in electronic circuits.
References
Lecture 8 Part A.pdfClass Notes
Memorization
What we have learnt
Final Test
Revision Tests
Term: Bipolar Junction Transistor (BJT)
Definition: A semiconductor device that amplifies current by controlling the current flow between two terminals (emitter and collector) through a third terminal (base).
Term: IV Characteristic
Definition: Graphical representation showing the relationship between the current through the device and the voltage across it, revealing operational modes.
Term: Minority Carrier Concentration
Definition: The presence of minority charge carriers in a semiconductor, which affects the electrical characteristics and efficiency of BJTs.
Term: Terminal Currents
Definition: Currents flowing through the terminals of a BJT, including collector current, base current, and emitter current, each characterized by unique relationships with voltages and bias conditions.
Term: Exponential Dependency on Voltage
Definition: The characteristic behavior of terminal currents in a BJT, which demonstrates that small changes in input voltage can lead to significant changes in output current.