Practice Condition: V = V - 11.4.1 | 11. Revisiting MOSFET (Contd.) | Analog Electronic Circuits - Vol 1
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Practice Questions

Test your understanding with targeted questions related to the topic.

Question 1

Easy

What happens to the IDS if the width W of the MOSFET is increased?

💡 Hint: Think about how increasing width affects resistance.

Question 2

Easy

What is the role of Vth in MOSFET operation?

💡 Hint: Consider why a gate voltage must be above a certain level.

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Interactive Quizzes

Engage in quick quizzes to reinforce what you've learned and check your comprehension.

Question 1

The current IDS in a MOSFET is driven primarily by which of the following parameters?

  • Width (W)
  • Length (L)
  • Both Width (W) and Length (L)

💡 Hint: Consider which factors affect current drain and resistance.

Question 2

True or False: In the saturation region, increasing VDS increases IDS significantly.

  • True
  • False

💡 Hint: Think about the behavior of current at high voltage.

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Challenge Problems

Push your limits with challenges.

Question 1

Given a MOSFET with W = 10μm, L = 1μm, VGS = 5V, and Vth = 1V, calculate IDS in the saturation region if λ = 0.1.

💡 Hint: Start with the saturation current expression.

Question 2

Design a circuit using a MOSFET that operates effectively in both saturation and triode regions. Explain its operation based on varying VGS.

💡 Hint: Think of practical applications involving push-pull configurations.

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