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Today, weβre exploring current mirrors. Can anyone explain what a current mirror does?
Isnβt it used to copy a current from one side of the circuit to another?
Exactly! It mirrors the reference current, I_ref, to another transistorsβ output, I_2. The operation is critical in analog circuit design.
How does the configuration influence the output current?
Great question! The output current is influenced by the characteristics of the transistors, such as their aspect ratios and whether they're in saturation.
I remember you mentioned that the output resistance plays a role in this?
Yes, it does! Higher output resistance helps maintain a stable output current despite fluctuations in voltage.
To summarize, current mirrors utilize reference currents and transistor configurations to replicate currents efficiently, with output resistance playing a crucial role.
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Now, letβs delve into the equations governing the output current I_2 for MOSFETs. Can anyone recall the relationship?
Is it I_2 = k * (V_GS - V_th)Β², where 'k' is a constant?
Close! The output current expression is derived as I_2 = I_ref * (W/L) ratio, considering saturation conditions.
What if the voltages change β does that alter I_2?
Yes! If drain voltages differ, we must consider additional terms due to Early effect, represented by the lambda factor, Ξ».
Does this mean the output current can vary with the voltage applied?
Exactly! This variation can affect performance, emphasizing the importance of managing output resistance and non-ideality.
In summary, the output current is defined not just by a simple expression but is modified by voltage conditions affecting the transistors.
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Letβs now differentiate between BJT and MOSFET current mirrors. What key differences can you identify?
BJTs depend heavily on their base current, while MOSFETs rely more on gate voltages, right?
That's correct! Also, MOSFETsβ currents are impacted by their W/L ratios, while BJTs use reverse saturation currents.
How do these differences affect output current behavior?
The output current for BJTs can be slightly affected by base current losses, while MOSFETs handle changes in gate voltage quite differently.
And what about the output resistance?
In general, output resistance is higher in well-designed MOSFET mirrors due to the effect of Ξ». This leads to better performance.
To summarize, the main differences lie in the operational mechanisms of BJTs versus MOSFETs, and this affects how we design circuits.
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Culminating our discussion, letβs focus on output resistance. Why do we need it in current mirrors?
Isnβt it to keep the output current stable under varying loads?
Exactly! Higher output resistance means less dependency of I_2 on V_out. This is vital for precision in analog applications.
How do we improve output resistance?
We can use cascode structures or ensure the transistors remain in saturation to enhance output resistance.
So it's crucial to manage conditions to maintain high output resistance?
Exactly! This ensures that our current mirrors function optimally, keeping output currents steady across applications.
In summary, managing output resistance is crucial for stable performance in current mirrors, enhancing reliability in circuits.
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The section delves into the expressions for output current in current mirror circuits based on reference currents and the aspect ratios of connected transistors. It details how saturation and threshold voltages influence the output current and discusses the importance of output resistance, particularly in enhancing the performance of these circuits.
In this section, we analyze the output current expressions in both BJT and MOSFET current mirror configurations. The basic structure involves two transistors where a reference current, denoted as I_ref, determines the output current I_2. In MOSFETs, the output current is derived from the saturation region characteristics, defined as I_ref multiplied by a factor based on the aspect ratio of the transistors and the differences in their gate-source voltages (V_GS) and threshold voltages (V_th).
The key derivations illustrate how additional components from output resistance and Early effect (represented by Ξ») affect current mirroring. The output current can exhibit non-ideality due to variations in this voltage, significantly affecting overall circuit performance. The discussion also extends to BJTs where similar principles apply, highlighting their dependency on reverse saturation currents and base currents.
The output resistance is critical in minimizing the non-ideality factor, requiring transistors to remain in saturation to achieve desired performance levels. An exploration of cascode configurations is presented, demonstrating how this arrangement can significantly increase output impedance, thereby enhancing current stability despite variations in output voltage. Overall, this section emphasizes the importance of understanding these current expressions to optimize analog circuit performance.
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To start with the analysis of current mirror we do have here, the circuit which is, as I said that it is having a reference current, I_ref and then we do have transistor-1 here which is diode connected and it develops a voltage V_GS1 which is supplied to the transistor-2. And then transistor-2, it is connected to the application here. So, this is the application circuit and we like to get the expression of the current I_2 in terms of the reference current or you can say this I_ref and then the size ratio of M1 and M2.
In a current mirror configuration, there are two transistors, where one acts as a reference (transistor-1) and the other (transistor-2) is the one providing the output current to the attached load or application circuit. Transistor-1 is often diode-connected, meaning its gate and drain are connected, which allows it to establish a reference current (I_ref). This current flows through transistor-2, and we wish to determine the output current (I_2) in relation to I_ref and the geometrical dimensions (sizes) of the two transistors.
Think of a water system in which one tank (transistor-1) has a known water level (current), and this level dictates how much water can flow through a pipe connected to a second tank (transistor-2). The size of the pipe (referring to the transistor size) affects how much water flows out into the second tank. Hence, we need to consider both the initial water height and the pipe size to determine the final water level in the second tank.
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So expression of this current I_2 which is given here. Incidentally, that is also equals to I_ref and expression of this current assuming transistor it is in saturation. In fact, this transistor it is in saturation because its drain and gate they are connected together. And its expression is given here, of the transistor and typically, in text book it is referred as k_n; so, that is the eternal conductance parameter. And then that multiplied by V_GS - V_th of the transistor square and then we do have (1+Ξ»V_DS) of the transistor.
The output current (I_2) can be expressed mathematically while considering that transistor-2 is in saturation mode. When a transistor is in saturation, it operates within a specific voltage range, where the output current is proportional to the gate-source voltage (V_GS) minus the threshold voltage (V_th) squared, multiplied by a constant factor (k_n), known as the transconductance parameter. Moreover, there is an additional term (1+Ξ»V_DS) that accounts for channel length modulation effect, where Ξ» represents the channel length modulation parameter.
Imagine the water flowing through a hose: the pressure (V_GS) minus a certain minimum pressure needed to start the flow (V_th) increases the water flow dramatically. The constant factor (k_n) acts like the width of the hoseβwider hoses can carry more water. However, as the pressure increases beyond a certain point (represented by the Ξ»V_DS term), the flow can change subtly due to hose length adjustments, influencing how much water actually flows out.
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So likewise, we also have the expression of current for the transistor-2. So we do have current here, it is also having very similar expression and because of the connection here, we do have both the V_GS values, they are equal namely V_GS1 and V_GS2. And also, we do have the threshold voltage here and here if we consider they are equal namely, V_th1 and V_th2. Then, by taking ratio of these 2 currents what we are getting is the expression of the current I_2 in terms of the reference current and then.
Both transistors in the current mirror have similar configurations leading to similar current expressions. Since they are connected in such a way (with both gate-source voltages being equal for M1 and M2), this allowed us to take the ratio of output currents for both transistors. This analysis gives us a relationship between the output current (I_2) and the reference current (I_ref), providing valuable insights into the circuit's performance based on the transistors' physical dimensions (aspect ratios).
Consider two elevators (transistors) in a building that receive the same amount of energy (current) from a power source. Their ability to lift weight (current output) is directly related to their size. If one elevator is larger than the other while both receive the same energy input, the larger one will lift more weight. Thus, by comparing their lifting capacity, we can predict how much weight each can handle given the same energy input.
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If the voltage here and voltage here namely, the drain voltage of the two transistors they are equal, so that makes this part equal to 0 and hence, the I_2 it is nothing but I_ref/size_ratio. So, we can say that is it is the current of transistor-2 when the 2 drain voltages they are equal. Now in case, as I said that the voltage here it will be defined by the application. And in case, if this voltage or drain voltage of transistor-2 it is different from drain voltage of transistor-1, then we will be getting this additional part of this current.
When the drain voltages of M1 and M2 are equal, the output current I_2 is simply proportional to the reference current I_ref adjusted by their size ratio. However, if the drain voltage of M2 differs from M1, additional current components come into play, which are influenced by the output resistance (r_ds) and other non-ideal factors, creating complexities that could impact the current output under different operational conditions.
Think about water pressure in two identical tanks connected at the bottom. If both tanks are filled to the same height (equal drain voltages), the water (current) flowing out of the connecting pipe is predictable. However, if one tank starts draining faster than the other, the pressure difference affects how much water can flow out, thereby needing extra consideration for current calculations.
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Key Concepts
Current Mirror Functionality: A circuit design for mimicking currents.
Output Resistance: Influences stability and performance of mirrors.
Effects of Aspect Ratio: Affects output current and transistor characteristics.
Saturation Region Importance: Critical for achieving expected current outputs.
Non-Ideality in Current Mirrors: Variances impacting performance based on output voltage.
See how the concepts apply in real-world scenarios to understand their practical implications.
In a current mirror with MOSFETs, if I_ref is 1mA and the W/L ratio is 2, then I_2 is expected to be 2mA.
A BJT current mirror can show output current significantly lower than I_ref if base current losses are not considered.
Use mnemonics, acronyms, or visual cues to help remember key information more easily.
In circuits, mirrors reflect, stable currents, we connect.
Imagine a wise old craftsman (the current mirror) who perfectly replicates the current needed to maintain harmony in his workshop.
CROSWO: Current Reflection, Output Stability, Width-to-Length Ratio, Output Resistance.
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Review the Definitions for terms.
Term: Current Mirror
Definition:
A circuit designed to copy a current from one branch to another, usually maintaining a constant current output.
Term: Output Resistance
Definition:
The resistance seen by the output terminal, influencing the stability and performance of the current mirror.
Term: Reference Current (I_ref)
Definition:
The initial current that sets the value for the mirrored output current in a current mirror circuit.
Term: Aspect Ratio
Definition:
The ratio of the width to the length of a transistor, influencing its current capacity.
Term: Saturation Region
Definition:
The operational state of a transistor where it allows maximum current to flow, essential for functioning current mirrors.
Term: Early Effect (Ξ»)
Definition:
A phenomenon in BJTs and MOSFETs where the output current is affected by changes in the collector-source or drain-source voltage.
Term: NonIdeality Factor
Definition:
A factor that accounts for deviations from ideal behavior in current mirrors, due to output voltage influences.