Practice Masking Materials and Etch Selectivity - 8.7 | 8. Lithography and Etching Processes Specific to Compound Semiconductors | Compound Semiconductors
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Practice Questions

Test your understanding with targeted questions related to the topic.

Question 1

Easy

What is the preferred masking material for GaN?

πŸ’‘ Hint: Look for materials known for their durability.

Question 2

Easy

Which material is used for InP to avoid lateral etching?

πŸ’‘ Hint: Remember the specific challenges of InP.

Practice 4 more questions and get performance evaluation

Interactive Quizzes

Engage in quick quizzes to reinforce what you've learned and check your comprehension.

Question 1

What is the primary benefit of using Ni as a masking material for GaN?

  • Low cost
  • High selectivity and durability
  • Easier processing

πŸ’‘ Hint: Consider which material offers the strongest protection during etching.

Question 2

True or False: Si₃Nβ‚„ is often used to ensure better control of lateral etching in InP.

  • True
  • False

πŸ’‘ Hint: Think about the fundamental purpose of materials used in etching.

Solve 1 more question and get performance evaluation

Challenge Problems

Push your limits with challenges.

Question 1

Given a scenario where a fabricator uses only photoresist for GaN instead of Ni, discuss the potential consequences on etch selectivity and device performance.

πŸ’‘ Hint: Reflect on how material properties change under etching conditions.

Question 2

Design a series of experiments to evaluate the performance differences between SiOβ‚‚ and Si₃Nβ‚„ in practical applications for GaN and InP. What factors would you consider?

πŸ’‘ Hint: Think about the process parameters and what metrics would signify success in targeting etch qualities.

Challenge and get performance evaluation