Practice Masking Materials And Etch Selectivity (8.7) - Lithography and Etching Processes Specific to Compound Semiconductors
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Masking Materials and Etch Selectivity

Practice - Masking Materials and Etch Selectivity

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Practice Questions

Test your understanding with targeted questions

Question 1 Easy

What is the preferred masking material for GaN?

💡 Hint: Look for materials known for their durability.

Question 2 Easy

Which material is used for InP to avoid lateral etching?

💡 Hint: Remember the specific challenges of InP.

4 more questions available

Interactive Quizzes

Quick quizzes to reinforce your learning

Question 1

What is the primary benefit of using Ni as a masking material for GaN?

Low cost
High selectivity and durability
Easier processing

💡 Hint: Consider which material offers the strongest protection during etching.

Question 2

True or False: Si₃N₄ is often used to ensure better control of lateral etching in InP.

True
False

💡 Hint: Think about the fundamental purpose of materials used in etching.

1 more question available

Challenge Problems

Push your limits with advanced challenges

Challenge 1 Hard

Given a scenario where a fabricator uses only photoresist for GaN instead of Ni, discuss the potential consequences on etch selectivity and device performance.

💡 Hint: Reflect on how material properties change under etching conditions.

Challenge 2 Hard

Design a series of experiments to evaluate the performance differences between SiO₂ and Si₃N₄ in practical applications for GaN and InP. What factors would you consider?

💡 Hint: Think about the process parameters and what metrics would signify success in targeting etch qualities.

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