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Advancements in MOSFET technology are driven by the need for faster, smaller, and more energy-efficient devices, leading to aggressive scaling down of dimensions. However, as dimensions approach the nanometer scale, challenges such as short-channel effects and heat dissipation arise. To overcome these limitations, various technology innovations and advanced transistor structures, including FinFET and GAA FET, have emerged to sustain the pace of Moore's Law and ensure continued improvements in performance and efficiency.