Electronic Devices 1 | 8. Advanced MOSFET Concepts by Pavan | Learn Smarter
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8. Advanced MOSFET Concepts

Advancements in MOSFET technology are driven by the need for faster, smaller, and more energy-efficient devices, leading to aggressive scaling down of dimensions. However, as dimensions approach the nanometer scale, challenges such as short-channel effects and heat dissipation arise. To overcome these limitations, various technology innovations and advanced transistor structures, including FinFET and GAA FET, have emerged to sustain the pace of Moore's Law and ensure continued improvements in performance and efficiency.

Sections

  • 8

    Advanced Mosfet Concepts

    This section discusses advanced concepts involving MOSFET scaling, its implications, associated challenges, and the cutting-edge innovations being developed to overcome these challenges.

    Learning Practice

  • 8.1

    Introduction

    This section introduces the significance and challenges of MOSFET technology in the context of advancing electronic devices.

    Learning Practice

  • 8.2

    Mosfet Scaling – Definition And Motivation

    MOSFET scaling involves reducing the dimensions of transistors to enhance their performance, density, and efficiency in electronic circuits.

    Learning Practice

  • 8.3

    Types Of Scaling

    This section outlines the different types of MOSFET scaling: Constant Field Scaling, Constant Voltage Scaling, and Generalized Scaling.

    Learning Practice

  • 8.4

    Benefits Of Mosfet Scaling

    MOSFET scaling leads to higher transistor density, faster operation, and lower power consumption.

    Learning Practice

  • 8.5

    Challenges Of Deep Submicron Scaling

    Deep submicron scaling of MOSFETs introduces significant challenges affecting performance and efficiency.

    Learning Practice

  • 8.6

    Technology Innovations To Overcome Scaling Limits

    Innovative technologies such as high-k dielectrics, metal gate technology, strained silicon, and silicon-on-insulator are essential to address challenges faced by MOSFET scaling.

    Learning Practice

  • 8.7

    Advanced Transistor Structures

    This section discusses advanced transistor structures such as FinFETs and Gate-All-Around FETs, which provide improved control over short-channel effects and power consumption in modern nanoelectronics.

    Learning Practice

  • 8.8

    Moore’s Law And Beyond

    Moore's Law continues to predict the doubling of transistors every 18-24 months, but new innovations in materials, 3D stacking, and integration are essential as scaling becomes more complex.

    Learning Practice

  • 8.9

    Current Technology Trends In Mosfet Design

    This section discusses the latest technology trends in MOSFET design that include CMOS scaling, 3D integration, heterogeneous integration, AI-optimized architectures, and quantum devices.

    Learning Practice

  • 8.10

    Summary Of Key Concepts

    The key concepts of MOSFET scaling highlight improvements in speed, density, and energy efficiency alongside challenges arising from short-channel effects and leakage.

    Learning Practice

  • 8.11

    Important Terms To Remember

    This section outlines key terminology and concepts critical to understanding advanced MOSFET technology.

    Learning Practice

References

ee-ed1-8.pdf

Class Notes

Memorization

What we have learnt

  • MOSFET scaling enhances dev...
  • Scaling below 100 nm introd...
  • Innovative technologies suc...

Final Test

Revision Tests