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Bipolar Junction Transistors (BJTs) are current-controlled, bipolar devices crucial for signal amplification and digital switching. They come in two types: NPN and PNP, and operate based on the interaction of p-n junctions. Key characteristics include their configurations, modes of operation, and applications in both analog and digital circuits, with a notable comparison to MOSFETs.
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Term: BJT
Definition: A Bipolar Junction Transistor is a current-controlled device that uses both electron and hole charge carriers, essential for amplification and switching.
Term: NPN Transistor
Definition: A type of BJT where the majority charge carrier is electrons, requiring positive base-emitter voltage for operation.
Term: PNP Transistor
Definition: A type of BJT where the majority charge carrier is holes, requiring negative base-emitter voltage for operation.
Term: Current Gain (β)
Definition: The ratio of collector current to base current in a BJT, typically ranging from 20 to 200.
Term: Configurations
Definition: The arrangement of BJTs, including Common Emitter, Common Base, and Common Collector, each with unique input/output characteristics.