Practice Current-voltage (i-v) Characteristics (6.5.1) - FinFET Characteristics and Modeling
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Current-Voltage (I-V) Characteristics

Practice - Current-Voltage (I-V) Characteristics

Learning

Practice Questions

Test your understanding with targeted questions

Question 1 Easy

What is I_DS?

💡 Hint: Think about the current's source.

Question 2 Easy

Define threshold voltage.

💡 Hint: Consider the minimum voltage needed for conduction.

4 more questions available

Interactive Quizzes

Quick quizzes to reinforce your learning

Question 1

What defines the drain current (I_DS) in a FinFET?

It is solely based on the gate voltage.
It is influenced by multiple parameters including W_eff and V_TH.
It is independent of the effective width.

💡 Hint: Consider all the parameters that you learned.

Question 2

True or False: Higher carrier mobility does not affect the performance of a FinFET.

True
False

💡 Hint: Think about how charges behave in a semiconductor.

1 more question available

Challenge Problems

Push your limits with advanced challenges

Challenge 1 Hard

Calculate the drain current \(I_{DS}\) if you have \(W_{eff} = 20 nm\), \(L = 10 nm\), \(V_{GS} = 0.8 V\), \(V_{TH} = 0.2 V\), and \(C_{ox} = 1.2 \times 10^{-2} F/m^2\), assuming \(\mu = 200 cm^2/Vs\).

💡 Hint: Plug in the values carefully following each step of the formula.

Challenge 2 Hard

Discuss how adjustments to \(V_{TH}\) would affect I-V characteristics in a practical application.

💡 Hint: Think about how this could impact battery-efficient designs.

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Reference links

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