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Practice Questions
Test your understanding with targeted questions related to the topic.
Question 1
Easy
What is I_DS?
💡 Hint: Think about the current's source.
Question 2
Easy
Define threshold voltage.
💡 Hint: Consider the minimum voltage needed for conduction.
Practice 4 more questions and get performance evaluation
Interactive Quizzes
Engage in quick quizzes to reinforce what you've learned and check your comprehension.
Question 1
What defines the drain current (I_DS) in a FinFET?
- It is solely based on the gate voltage.
- It is influenced by multiple parameters including W_eff and V_TH.
- It is independent of the effective width.
💡 Hint: Consider all the parameters that you learned.
Question 2
True or False: Higher carrier mobility does not affect the performance of a FinFET.
- True
- False
💡 Hint: Think about how charges behave in a semiconductor.
Solve 1 more question and get performance evaluation
Challenge Problems
Push your limits with challenges.
Question 1
Calculate the drain current \(I_{DS}\) if you have \(W_{eff} = 20 nm\), \(L = 10 nm\), \(V_{GS} = 0.8 V\), \(V_{TH} = 0.2 V\), and \(C_{ox} = 1.2 \times 10^{-2} F/m^2\), assuming \(\mu = 200 cm^2/Vs\).
💡 Hint: Plug in the values carefully following each step of the formula.
Question 2
Discuss how adjustments to \(V_{TH}\) would affect I-V characteristics in a practical application.
💡 Hint: Think about how this could impact battery-efficient designs.
Challenge and get performance evaluation