6. FinFET Characteristics and Modeling
FinFET technology represents a significant advancement in transistor architecture, addressing the limitations of conventional planar MOSFETs at technology nodes below 22 nm. The chapter outlines the structural characteristics of FinFETs, compares their performance to planar devices, and emphasizes their advantages in terms of leakage control, scalability, and drive current. It also delves into modeling techniques and simulations essential for understanding FinFET behavior in circuit design.
Sections
Navigate through the learning materials and practice exercises.
What we have learnt
- FinFETs utilize a 3D architecture to enhance electrostatic control and scalability.
- The modeling of FinFETs, including I-V characteristics and parameters, plays a crucial role in circuit simulators.
- FinFETs exhibit improved performance in low-power, high-speed applications compared to planar MOSFETs.
Key Concepts
- -- FinFET
- A 3D multigate transistor architecture designed to overcome the scaling limitations of planar MOSFETs.
- -- DIBL
- Drain-Induced Barrier Lowering; a phenomenon in MOSFETs affecting leakage current, which is minimized in FinFETs.
- -- SPICE Modeling
- A simulation environment used for circuit design, which employs compact models to predict FinFET behavior.
- -- CurrentVoltage (IV) Characteristics
- Relationships between the current flowing through the transistor and the voltage across it, crucial for modeling FinFET behavior.
Additional Learning Materials
Supplementary resources to enhance your learning experience.