Electronic Devices 2 | 6. FinFET Characteristics and Modeling by Pavan | Learn Smarter
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6. FinFET Characteristics and Modeling

FinFET technology represents a significant advancement in transistor architecture, addressing the limitations of conventional planar MOSFETs at technology nodes below 22 nm. The chapter outlines the structural characteristics of FinFETs, compares their performance to planar devices, and emphasizes their advantages in terms of leakage control, scalability, and drive current. It also delves into modeling techniques and simulations essential for understanding FinFET behavior in circuit design.

Sections

  • 6

    Finfet Characteristics And Modeling

    FinFETs are advanced transistors addressing the limitations of traditional MOSFETs, featuring a unique 3D structure for improved control and performance.

    Learning Practice

  • 6.1

    Introduction To Finfet Technology

    FinFET technology is a 3D transistor architecture that addresses the limitations of planar MOSFETs at sub-22 nm scales.

    Learning Practice

  • 6.2

    Finfet Structure Overview

    This section presents an overview of the FinFET structure, highlighting its components such as the gate, fin, source/drain, and substrate, along with types of FinFETs.

    Learning Practice

  • 6.3

    Key Characteristics Of Finfets

    FinFETs exhibit improved electrostatic control and performance over traditional planar MOSFETs, especially at smaller technology nodes.

    Learning Practice

  • 6.4

    Finfet Vs Planar Mosfet

    This section compares FinFET and planar MOSFET technologies, highlighting the advantages FinFETs have over traditional planar designs in terms of performance and scalability.

    Learning Practice

  • 6.5

    Analytical Modeling Of Finfet Behavior

    This section discusses the methods used for analytical modeling of FinFETs, particularly focusing on current-voltage characteristics and subthreshold behavior.

    Learning Practice

  • 6.5.1

    Current-Voltage (I-V) Characteristics

    This section describes the foundational equations governing the Current-Voltage (I-V) characteristics of FinFETs, highlighting the impact of the device architecture on performance metrics.

    Learning Practice

  • 6.5.2

    Subthreshold Behavior

    Subthreshold behavior in FinFETs exhibits a steeper subthreshold slope than traditional MOSFETs, enhancing off-state control and efficiency.

    Learning Practice

  • 6.6

    Spice Modeling Of Finfets

    This section discusses the SPICE modeling of FinFETs, highlighting industry-standard compact models and pertinent parameters for accurate simulation.

    Learning Practice

  • 6.7

    Finfet Device Parameters For Simulation

    This section presents the key parameters for FinFET devices used in simulations, highlighting their ranges and significance in circuit design.

    Learning Practice

  • 6.8

    Layout And Fabrication Considerations

    This section discusses the critical factors of layout and fabrication in FinFET technology, including fin pitch, gate length control, and the importance of fin height uniformity.

    Learning Practice

  • 6.9

    Finfet In Circuit Design

    FinFET technology plays a crucial role in circuit design by enabling low-power, high-speed digital integrated circuits.

    Learning Practice

  • 6.10

    Summary Of Key Concepts

    This section encapsulates the main advantages and modeling aspects of FinFET technology as compared to traditional planar MOSFETs.

    Learning Practice

References

ee4-ed2-6.pdf

Class Notes

Memorization

What we have learnt

  • FinFETs utilize a 3D archit...
  • The modeling of FinFETs, in...
  • FinFETs exhibit improved pe...

Final Test

Revision Tests