Practice Finfet Characteristics And Modeling (6) - FinFET Characteristics and Modeling
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FinFET Characteristics and Modeling

Practice - FinFET Characteristics and Modeling

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Practice Questions

Test your understanding with targeted questions

Question 1 Easy

What does FinFET stand for?

💡 Hint: Think about what the 'fin' refers to in the structure.

Question 2 Easy

How many sides does the gate of a FinFET wrap around?

💡 Hint: Consider how FinFET improves on planar technology.

4 more questions available

Interactive Quizzes

Quick quizzes to reinforce your learning

Question 1

What does FinFET stand for?

Fin Field-Effect Transistor
Fin Functional Electronics
Field-Effect Nano Transistor

💡 Hint: Recall the initial words that describe this transistor type.

Question 2

True or False: FinFET technology is suited for nodes below 7 nm.

True
False

💡 Hint: Think about how size affects transistor performance.

2 more questions available

Challenge Problems

Push your limits with advanced challenges

Challenge 1 Hard

Consider a FinFET with a gate oxide capacitance (Cox) of 3.45 fF/μm², an effective width (Weff) of 20 nm, and a carrier mobility (μ) of 300 cm²/Vs. Calculate the drain current (IDS) when VGS is 1.5 V and VTH is 0.7 V, with VDS set to 0.1 V.

💡 Hint: Don’t forget to use consistent units when calculating.

Challenge 2 Hard

Critically analyze the trade-offs of using FinFET technology in a high-performance system compared to planar MOSFETs in terms of power dissipation and fabrication costs.

💡 Hint: Think about scenarios where tight power budgets are essential.

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Reference links

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