Practice FinFET Characteristics and Modeling - 6 | 6. FinFET Characteristics and Modeling | Electronic Devices 2
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Practice Questions

Test your understanding with targeted questions related to the topic.

Question 1

Easy

What does FinFET stand for?

πŸ’‘ Hint: Think about what the 'fin' refers to in the structure.

Question 2

Easy

How many sides does the gate of a FinFET wrap around?

πŸ’‘ Hint: Consider how FinFET improves on planar technology.

Practice 4 more questions and get performance evaluation

Interactive Quizzes

Engage in quick quizzes to reinforce what you've learned and check your comprehension.

Question 1

What does FinFET stand for?

  • Fin Field-Effect Transistor
  • Fin Functional Electronics
  • Field-Effect Nano Transistor

πŸ’‘ Hint: Recall the initial words that describe this transistor type.

Question 2

True or False: FinFET technology is suited for nodes below 7 nm.

  • True
  • False

πŸ’‘ Hint: Think about how size affects transistor performance.

Solve 2 more questions and get performance evaluation

Challenge Problems

Push your limits with challenges.

Question 1

Consider a FinFET with a gate oxide capacitance (Cox) of 3.45 fF/ΞΌmΒ², an effective width (Weff) of 20 nm, and a carrier mobility (ΞΌ) of 300 cmΒ²/Vs. Calculate the drain current (IDS) when VGS is 1.5 V and VTH is 0.7 V, with VDS set to 0.1 V.

πŸ’‘ Hint: Don’t forget to use consistent units when calculating.

Question 2

Critically analyze the trade-offs of using FinFET technology in a high-performance system compared to planar MOSFETs in terms of power dissipation and fabrication costs.

πŸ’‘ Hint: Think about scenarios where tight power budgets are essential.

Challenge and get performance evaluation