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The Junction Field Effect Transistor (JFET) is a voltage-controlled unipolar device primarily used for amplifying or switching signals. Unlike bipolar junction transistors (BJTs), JFETs rely on gate voltage to control the drain current. This chapter explains the construction, working principles, biasing, and characteristics of JFETs, along with their applications, advantages, and disadvantages.
References
ee4-ed2-3.pdfClass Notes
Memorization
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Final Test
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Term: JFET
Definition: A Junction Field Effect Transistor is a voltage-controlled unipolar device used for amplifying or switching signals.
Term: Ohmic Region
Definition: The range of operation where the JFET acts like a variable resistor when V_DS is small.
Term: Saturation Region
Definition: The operating state of the JFET where I_D is constant and the device acts as an amplifier.
Term: Cutoff Region
Definition: The state where the channel is closed, resulting in negligible drain current.
Term: Transfer Characteristics
Definition: A plot of drain current versus gate-source voltage characterized by Shockley's Equation.