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FinFET technology represents a significant advancement in semiconductor design, enabling enhanced performance at smaller nodes by overcoming the limitations of traditional planar MOSFETs. By offering superior electrostatic control, reduced leakage current, and improved scalability, FinFETs have become integral to modern processors and high-performance computing applications. However, the complexity of fabrication and design poses challenges for widespread adoption.
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Term: FinFET
Definition: A 3D multi-gate transistor designed to offer better control of short-channel effects and lower leakage currents compared to traditional planar MOSFETs.
Term: ShortChannel Effects (SCEs)
Definition: Issues that arise in MOSFETs as the gate length becomes comparable to the depletion width of the channel, leading to reduced electrostatic control.
Term: Electrostatic Control
Definition: The ability of a transistor to control the conductance of the channel by applying voltage to the gate, crucial in maintaining performance as device dimensions shrink.
Term: Scalability
Definition: The capability of a technology to be effectively implemented at smaller technology nodes.
Term: GateAllAround FET (GAA FET)
Definition: An advanced transistor structure that provides even better electrostatic control than FinFETs, where the gate material surrounds the channel on all sides.