4. Introduction to FinFET Technology
FinFET technology represents a significant advancement in semiconductor design, enabling enhanced performance at smaller nodes by overcoming the limitations of traditional planar MOSFETs. By offering superior electrostatic control, reduced leakage current, and improved scalability, FinFETs have become integral to modern processors and high-performance computing applications. However, the complexity of fabrication and design poses challenges for widespread adoption.
Sections
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What we have learnt
- FinFETs are a type of 3D transistor that address the limitations of planar MOSFETs.
- They provide better control over short-channel effects and lower leakage currents, making them suitable for advanced CMOS technology.
- Despite their advantages, FinFET technology faces challenges in fabrication complexity, increased costs, and the need for sophisticated design tools.
Key Concepts
- -- FinFET
- A 3D multi-gate transistor designed to offer better control of short-channel effects and lower leakage currents compared to traditional planar MOSFETs.
- -- ShortChannel Effects (SCEs)
- Issues that arise in MOSFETs as the gate length becomes comparable to the depletion width of the channel, leading to reduced electrostatic control.
- -- Electrostatic Control
- The ability of a transistor to control the conductance of the channel by applying voltage to the gate, crucial in maintaining performance as device dimensions shrink.
- -- Scalability
- The capability of a technology to be effectively implemented at smaller technology nodes.
- -- GateAllAround FET (GAA FET)
- An advanced transistor structure that provides even better electrostatic control than FinFETs, where the gate material surrounds the channel on all sides.
Additional Learning Materials
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