8. FinFET Scaling and Future Trends
FinFET technology has allowed for continued adherence to Moore's Law in sub-22nm nodes by overcoming the limitations of traditional MOSFETs. However, as FinFETs approach scaling limits, the semiconductor industry is exploring next-generation devices like GAAFETs and 3D integration solutions to sustain performance improvements and tackle emerging challenges.
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Sections
Navigate through the learning materials and practice exercises.
What we have learnt
- FinFETs have successfully maintained Moore’s Law in advanced semiconductor technology nodes but are encountering inherent scaling difficulties.
- Future trends include GAAFETs and other post-FinFET architectures that may offer improvements in performance and integration density.
- 3D integration and advanced packaging techniques present viable alternatives to traditional planar scaling approaches.
Key Concepts
- -- FinFET
- A three-dimensional transistor design that controls current more effectively than traditional planar transistors, allowing for continued scaling in semiconductor technology.
- -- GAAFET
- Gate-All-Around FETs use nanowires or nanosheets that are completely surrounded by the gate, providing superior electrostatic control compared to FinFETs.
- -- 3D ICs
- Integrated circuits that stack multiple chip layers to enhance performance, reduce connection distances, and improve density.
- -- DTCO (Design and Technology CoOptimization)
- An approach that aligns design innovations and technology scaling to optimize performance and manufacturability.
Additional Learning Materials
Supplementary resources to enhance your learning experience.