Electronic Devices 2 | 8. FinFET Scaling and Future Trends by Pavan | Learn Smarter
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8. FinFET Scaling and Future Trends

FinFET technology has allowed for continued adherence to Moore's Law in sub-22nm nodes by overcoming the limitations of traditional MOSFETs. However, as FinFETs approach scaling limits, the semiconductor industry is exploring next-generation devices like GAAFETs and 3D integration solutions to sustain performance improvements and tackle emerging challenges.

Sections

  • 8

    Finfet Scaling And Future Trends

    This section discusses the advancements and limitations of FinFET technology and explores future semiconductor trends beyond FinFETs.

  • 8.1

    Introduction

    FinFET technology extends Moore's Law into sub-22nm nodes, but faces scaling limits and new challenges.

  • 8.2

    Scaling Trends In Finfet Technology

    The section discusses the key scaling trends and goals currently impacting FinFET technology as it is utilized in advanced semiconductor nodes.

  • 8.3

    Limitations Of Finfet Scaling

    FinFETs, while beneficial in smaller semiconductor nodes, face several limitations as they scale down in size.

  • 8.4

    Beyond Finfet: Future Semiconductor Devices

    This section discusses advanced semiconductor devices emerging post-FinFET technology, highlighting their advantages and potential applications.

  • 8.4.1

    Gate-All-Around Fets (Gaafets)

    GAAFETs represent a promising advancement in transistor technology offering superior electrostatic control, potentially overcoming FinFET limitations.

  • 8.4.2

    Nanosheet/nanoribbon Fets

    Nanosheet/Nanoribbon FETs represent a significant advancement beyond FinFET technology, featuring wider channels and stackable designs for improved performance and density.

  • 8.4.3

    Vertical Fets (V-Fets)

    Vertical FETs (V-FETs) are a new class of semiconductor devices that allow current to flow vertically from source to drain, offering promising applications for 3D IC integration.

  • 8.4.4

    Tunneling Fets (Tfets)

    Tunneling FETs (TFETs) utilize band-to-band tunneling for operation, offering significant advantages for ultra-low power applications.

  • 8.4.5

    Carbon Nanotube Fets (Cntfets)

    Carbon Nanotube FETs leverage the unique properties of carbon nanotubes to significantly enhance electronic performance in semiconductor devices.

  • 8.4.6

    2d Material Fets

    2D Material FETs utilize ultra-thin materials for semiconductor channels, offering significant advantages in electrostatic control and performance at nanoscale dimensions.

  • 8.5

    Design And Technology Co-Optimization (Dtco)

    Design and Technology Co-Optimization (DTCO) focuses on integrating technology scaling, design innovations, and enhanced EDA tools to aid in semiconductor scaling.

  • 8.6

    3d Integration And Packaging Trends

    This section discusses the advancements in 3D integration and packaging technologies that enable more efficient semiconductor designs as conventional planar scaling becomes economically challenging.

  • 8.7

    Summary Of Future Trends

    This section outlines the key future trends in semiconductor technology, focusing on innovations beyond FinFETs.

  • 8.8

    Summary Of Key Concepts

    This section discusses the evolution of FinFET technology, its current limitations, and introduces next-generation semiconductor devices that promise to extend the scaling of electronics.

References

ee4-ed2-8.pdf

Class Notes

Memorization

What we have learnt

  • FinFETs have successfully m...
  • Future trends include GAAFE...
  • 3D integration and advanced...

Final Test

Revision Tests