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FinFET technology has allowed for continued adherence to Moore's Law in sub-22nm nodes by overcoming the limitations of traditional MOSFETs. However, as FinFETs approach scaling limits, the semiconductor industry is exploring next-generation devices like GAAFETs and 3D integration solutions to sustain performance improvements and tackle emerging challenges.
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Term: FinFET
Definition: A three-dimensional transistor design that controls current more effectively than traditional planar transistors, allowing for continued scaling in semiconductor technology.
Term: GAAFET
Definition: Gate-All-Around FETs use nanowires or nanosheets that are completely surrounded by the gate, providing superior electrostatic control compared to FinFETs.
Term: 3D ICs
Definition: Integrated circuits that stack multiple chip layers to enhance performance, reduce connection distances, and improve density.
Term: DTCO (Design and Technology CoOptimization)
Definition: An approach that aligns design innovations and technology scaling to optimize performance and manufacturability.