5. FinFET Device Structure and Operation
FinFETs are advanced three-dimensional transistors that enhance performance and reduce leakage compared to traditional planar MOSFETs. The chapter details the structure, fabrication process, advantages, and operational principles of FinFETs. It concludes with a comparison to MOSFETs, emphasizing the complexities of fabrication but also the benefits in electrostatics and drive strength, particularly for advanced scaling in modern nodes.
Sections
Navigate through the learning materials and practice exercises.
What we have learnt
- FinFET technology effectively utilizes a 3D fin-shaped channel to improve performance metrics.
- The fabrication process of FinFETs is more intricate than that of traditional MOSFETs, facilitating greater scaling efficiency.
- FinFETs operate similarly to MOSFETs but leverage superior electrostatic control for enhanced operation, particularly in advanced CMOS manufacturing.
Key Concepts
- -- FinFET
- A type of transistor with a three-dimensional structure that improves electrostatic control and reduces leakage current.
- -- Gate Control
- The ability of the gate to influence the channel current, which in FinFETs is enhanced due to the gate's wrap-around design.
- -- DIBL
- Drain-Induced Barrier Lowering, a phenomenon that affects short-channel devices, reduced significantly in FinFETs.
- -- SOI
- Silicon-On-Insulator, a technology used in the substrate preparation for FinFETs.
- -- Effective Channel Width
- The width of the channel that influences the drive current capabilities of the transistor, calculated based on fin dimensions.
Additional Learning Materials
Supplementary resources to enhance your learning experience.