Electronic Devices 2 | 5. FinFET Device Structure and Operation by Pavan | Learn Smarter
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5. FinFET Device Structure and Operation

FinFETs are advanced three-dimensional transistors that enhance performance and reduce leakage compared to traditional planar MOSFETs. The chapter details the structure, fabrication process, advantages, and operational principles of FinFETs. It concludes with a comparison to MOSFETs, emphasizing the complexities of fabrication but also the benefits in electrostatics and drive strength, particularly for advanced scaling in modern nodes.

Sections

  • 5

    Finfet Device Structure And Operation

    This section provides an overview of FinFETs, highlighting their 3D structure, manufacturing process, and operational principles.

    Learning Practice

  • 5.1

    Introduction

    FinFETs are advanced transistors that overcome the limitations of traditional MOSFETs in advanced technology nodes.

    Learning Practice

  • 5.2

    Finfet Structure

    This section introduces the structure of FinFETs, emphasizing the advantages of their multi-gate geometry over traditional MOSFETs.

    Learning Practice

  • 5.2.1

    Component Description

    This section describes the key components of a FinFET, highlighting their structure and functions.

    Learning Practice

  • 5.2.2

    Types Of Finfets

    This section outlines various types of FinFETs, emphasizing their unique structures and applications.

    Learning Practice

  • 5.3

    Finfet Fabrication Process (Simplified)

    The FinFET fabrication process involves a series of steps to create advanced 3D transistors, focusing on substrate preparation, patterning, gate formation, and interconnects.

    Learning Practice

  • 5.3.1

    Substrate Preparation

    Substrate preparation is the initial step in FinFET fabrication, utilizing either Silicon-on-Insulator (SOI) or bulk silicon wafers.

    Learning Practice

  • 5.3.2

    Fin Patterning And Etching

    This section explores the fin patterning and etching process in FinFET fabrication, highlighting the techniques used to define the fin structures.

    Learning Practice

  • 5.3.3

    Gate Stack Formation

    Gate stack formation involves the deposition of high-Îș dielectric and metal gate materials onto the FinFET structure to enhance electrostatic control.

    Learning Practice

  • 5.3.4

    Spacer Formation And Source/drain Implantation

    This section focuses on the processes involved in spacer formation and source/drain implantation in FinFETs, crucial for defining the device's electrical characteristics.

    Learning Practice

  • 5.3.5

    Silicidation And Contacts

    This section discusses the silicidation process and contact formation in FinFETs, emphasizing their importance in achieving low-resistance electrical connections.

    Learning Practice

  • 5.3.6

    Interconnects

    The section on interconnects discusses the creation of metal layers for wiring in FinFET fabrication, emphasizing techniques like damascene and dual-damascene processes.

    Learning Practice

  • 5.4

    Key Dimensions In Finfets

    This section outlines the critical dimensions in FinFETs, including fin width, height, and gate length, which influence their electrostatic control and performance.

    Learning Practice

  • 5.5

    Operating Principle Of Finfets

    FinFETs function through three distinct operational regions, enabling efficient control and reduced leakage current.

    Learning Practice

  • 5.6

    Advantages Of Finfet Operation

    FinFETs offer significant advantages in transistor operation compared to traditional MOSFETs, including enhanced control over short-channel effects and reduced leakage.

    Learning Practice

  • 5.7

    Finfet Vs Mosfet Operation

    This section compares the operational characteristics and performance metrics of FinFETs with those of traditional MOSFETs.

    Learning Practice

  • 5.8

    Design Considerations In Finfets

    The design considerations for FinFETs involve optimizing fin count, fin pitch, and controlling variability to improve device performance while managing area constraints.

    Learning Practice

  • 5.9

    Summary Of Key Concepts

    FinFETs are advanced transistors that enhance performance and reduce leakage through a 3D channel and multi-gate structure.

    Learning Practice

References

ee4-ed2-5.pdf

Class Notes

Memorization

What we have learnt

  • FinFET technology effective...
  • The fabrication process of ...
  • FinFETs operate similarly t...

Final Test

Revision Tests