Procedure (4.1.2) - Design and Simulation of Basic Combinational CMOS Logic Gates (NAND/NOR)
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Procedure

Procedure - 4.1.2

Practice

Interactive Audio Lesson

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Schematic Capture of 2-Input NAND Gate

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Teacher
Teacher Instructor

Today, we’re going to start by understanding how to capture the schematic for a 2-input NAND gate. Can anyone tell me the first steps we need to take?

Student 1
Student 1

Do we start by placing the NMOS and PMOS transistors on the simulator?

Teacher
Teacher Instructor

Exactly! You'll need two NMOS transistors connected in series for the pull-down network and two PMOS transistors connected in parallel for the pull-up network. Remember, the output node connects the sources of PMOS and the drains of NMOS together.

Student 2
Student 2

What about connections? Which terminals do we connect to GND and VDD?

Teacher
Teacher Instructor

Great question! The bulks of NMOS transistors connect to GND, and the bulks of PMOS should connect to VDD. Let's remember this with the acronym β€˜GAND’ - GND for NMOS and VDD for PMOS.

Student 3
Student 3

How do we ensure our design is correct before running any simulations?

Teacher
Teacher Instructor

Always double-check your schematic against the paper design. This will help you avoid last-minute mistakes. Now, let’s summarize what we learned. We discussed the correct connections for NMOS and PMOS, the significance of bulk connections, and the importance of verifying our designs before simulation.

Functional Verification of the Gates

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Teacher
Teacher Instructor

Now that we’ve designed the gates, let’s talk about functional verification. Who can explain why we need to create truth tables?

Student 1
Student 1

To ensure that the output states match our expectations for all input combinations.

Teacher
Teacher Instructor

Correct! For our NAND and NOR gates, we need to check four combinations: 00, 01, 10, and 11. We will then run a DC Operating Point Analysis. What do you think we should record?

Student 2
Student 2

We need to note down the output voltage for each combination?

Teacher
Teacher Instructor

Right! We’ll create a table to display Input A, Input B, Expected Output, Simulated Voltage, and whether it matches. Remember, checking discrepancies helps refine our design. Does anyone know how we can visualize our gate's performance?

Student 3
Student 3

We can generate the Voltage Transfer Characteristic (VTC) plot?

Teacher
Teacher Instructor

Absolutely! Analyzing the shape of the VTC will help us understand the switching threshold of our gates. To summarize, we will create truth tables and VTC plots to verify our designs against expected outputs.

Dynamic Characterization and Delay Measurement

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Teacher
Teacher Instructor

Next, let's move on to dynamic characterization. Why is it important to measure propagation delays in our gates?

Student 2
Student 2

It shows how fast our gates respond to input changes.

Teacher
Teacher Instructor

Exactly! To measure delays, we will conduct transient simulations. For worst-case delays, what transition configurations should we use?

Student 1
Student 1

For the NAND gate, we should measure tpHL with one input high and the other transitioning.

Student 4
Student 4

And for tpLH, one input should go from high to low while the other remains high.

Teacher
Teacher Instructor

Well done! Now, let’s discuss how to present our delay results. We should include a table for tpHL, tpLH, and the average propagation delay. Before we end, can anyone summarize what we did today?

Student 3
Student 3

We discussed measuring dynamic delays using transient simulation, focusing on specific transitions to determine worst-case scenarios.

Logical Effort and Transistor Sizing Optimization

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Teacher
Teacher Instructor

In our next discussion, we will touch on logical effort. Can anyone explain what logical effort is?

Student 4
Student 4

It measures the difficulty of driving a load compared to an inverter.

Teacher
Teacher Instructor

Great understanding! This concept allows us to compare the performance of our NAND and NOR gates versus a reference inverter. Why is it essential to optimize transistor sizes?

Student 1
Student 1

To achieve better performance, like reducing delay and balancing rise and fall times.

Teacher
Teacher Instructor

Exactly! We'll explore methods for systematic sizing. We might begin by looking at the NMOS transistor widths. How should we size them relative to those in an inverter?

Student 3
Student 3

If we have two NMOS in series, wouldn’t they need to be wider, like double the size?

Teacher
Teacher Instructor

Precisely! For effective balancing, each NMOS should be substantially larger if they're in series. To conclude, we discussed logical effort, the need for optimization, and how to size our transistors effectively.

Post-Lab Analysis and Reporting

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Teacher
Teacher Instructor

As we wrap up our lab, let’s discuss the lab report requirements. What key elements should we include?

Student 2
Student 2

We need to write our objectives and describe the preparation we did.

Teacher
Teacher Instructor

Correct! It’s also important to include the methodologies and results for each experiment. What do we want to ensure about our conclusions?

Student 3
Student 3

That they are clear and summarize our findings effectively.

Teacher
Teacher Instructor

Exactly! Your conclusions should reflect whether you achieved the lab’s objectives. Remember to present the information clearly, including figures and tables with descriptive captions. Anyone has final thoughts on what we learned in this module?

Student 1
Student 1

We learned a lot about CMOS design and the importance of accurate simulation and verification.

Teacher
Teacher Instructor

Well said! A clear understanding of these principles will aid in practical applications. Let's summarize: we've covered key report elements, and the importance of clarity and completeness in our communications.

Introduction & Overview

Read summaries of the section's main ideas at different levels of detail.

Quick Overview

This section describes the procedure for designing and simulating basic combinational CMOS logic gates, specifically NAND and NOR gates.

Standard

The procedure section outlines the necessary steps for students to successfully design, simulate, and verify the functionality of 2-input NAND and NOR gates, emphasizing preparation, simulation details, and post-lab analysis.

Detailed

Detailed Summary

This section titled 'Procedure' serves as a comprehensive guide for students undertaking Lab Module 6, focusing on the design and simulation of basic combinational CMOS logic gates, particularly the 2-input NAND and NOR gates. The procedure emphasizes critical tasks that students must complete to achieve their learning objectives, which include:

  1. Schematic Capture: Students will prepare accurate transistor-level schematics of the NAND and NOR gates using EDA tools. This includes understanding the placement and connections of PMOS and NMOS transistors in their respective configurations, ensuring proper pull-up and pull-down networks.
  2. Functional Verification: The next major step involves performing DC simulations to verify the gates' functionality through truth tables and Voltage Transfer Characteristics (VTCs). Students will methodologically test all possible input combinations to validate output states and analyze VTC plots to confirm logical behavior.
  3. Dynamic Characterization: Students will conduct transient simulations to measure propagation delays and evaluate the dynamic performance of their designed gates under different conditions.
  4. Logical Effort Analysis: A qualitative understanding of logical effort will be developed, comparing multi-input gates to a standard CMOS inverter, allowing students to assess delay trends based on transistor configurations.
  5. Transistor Sizing Optimization: Finally, a systematic approach toward optimizing transistor sizes will be introduced, with students learning to balance drive capability and delay while considering area and loading constraints. This experience will culminate in a comprehensive lab report detailing methodologies, findings, and analyses, showcasing the students' understanding of CMOS combinational logic design.

Key Concepts

  • Schematic Capture: The creation of circuit diagrams using software to represent logic gates.

  • Functional Verification: Testing the constructed gates to ensure they work according to truth tables and expected outputs.

  • Dynamic Characterization: Measuring how quickly outputs respond to changes in inputs, including assessment of propagation delays.

  • Optimization: The process of refining transistor sizes to achieve better speed and performance of logic gates.

Examples & Applications

Designing a 2-input NAND gate involves connecting two NMOS transistors in series and two PMOS transistors in parallel.

Functional verification can be demonstrated by creating a truth table that outlines expected outcomes based on various input combinations.

Memory Aids

Interactive tools to help you remember key concepts

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Rhymes

NAND gates are quite grand, output low requires both inputs at hand.

πŸ“–

Stories

Once upon a time, the NAND gate decided to play. It said, 'I will only say NO if both of you say YES!’ This is how it kept its outputs elusive!

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Memory Tools

Remember 'GAND' for remembering GND for NMOS and VDD for PMOS.

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Acronyms

NAND

Not AND - reminding you of its output logic.

Flash Cards

Glossary

NAND Gate

A digital logic gate that outputs false only when all its inputs are true; otherwise, it outputs true.

NOR Gate

A digital logic gate that outputs true only when all its inputs are false; otherwise, it outputs false.

Schematic Capture

The process of creating a visual representation of a circuit using symbols and lines to represent components and their interconnections.

Propagation Delay

The time it takes for a signal to travel from the input to the output of a gate.

Voltage Transfer Characteristic (VTC)

A curve that represents the output voltage of a gate as a function of the input voltage.

Transistor Sizing

The process of choosing the appropriate width and length of transistors to achieve desired electrical characteristics.

Logical Effort

A method for estimating the delay of a gate in terms of its input capacitance relative to its drive strength.

Reference links

Supplementary resources to enhance your learning experience.