Design and Simulation of Basic Combinational CMOS Logic Gates (NAND/NOR)
The chapter focuses on the design and simulation of basic combinational CMOS logic gates, specifically the NAND and NOR gates. It outlines the objectives, procedures, and experiments necessary for understanding their operational characteristics, with a detailed emphasis on simulations and practical applications in digital VLSI design. Key activities include schematic capture, functional verification, transient analysis, and transistor sizing optimization to enhance performance.
Sections
Navigate through the learning materials and practice exercises.
What we have learnt
- Students will learn to design and simulate CMOS NAND and NOR gates, validate their functionality, and understand critical dynamic characteristics.
- The chapter emphasizes the importance of transistor sizing for enhancing the performance of CMOS logic gates.
- Understanding logical effort helps in comparing the driving strengths and speeds of different gate configurations.
Key Concepts
- -- CMOS Logic
- A technology for constructing integrated circuits that use complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions.
- -- Logical Effort
- A method for estimating the delay of a gate relative to an ideal inverter, factoring in the input capacitance and drive capability.
- -- Truth Table
- A table that shows all possible input combinations to a logic gate and the corresponding output.
- -- Voltage Transfer Characteristic (VTC)
- A graphical representation that shows how the output voltage of a circuit varies with the input voltage.
- -- Propagation Delay
- The time it takes for a signal to travel through a gate, typically denoted as tpHL and tpLH for high-to-low and low-to-high transitions, respectively.
Additional Learning Materials
Supplementary resources to enhance your learning experience.