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Today, we're exploring current mirrors, which are essential components in analog circuits. Can anyone tell me why current mirrors are significant?
They help provide a constant current in the circuit, right?
Exactly! By mirroring a reference current, they maintain a stable current output irrespective of voltage fluctuations. This leads us to our next topic: early voltage. Who can explain what early voltage is?
Isn't it the tendency of the output current to increase with an increase in output voltage?
Correct! Early voltage helps in understanding the output characteristics of transistors. Let's remember it with the acronym 'E.V.' for early voltage impacting output current. Our goal is to understand how this parameter affects current mirrors.
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Let's dive into calculating output currents in MOSFET current mirrors. Can someone remind us of the formula to find output current?
Is it I_DS = k * (V_GS - V_th)?
Good attempt! The total current will depend on the formula modified by the early voltage impact. If we denote our output current as I_DS2, how do we relate that to our reference current?
We would consider the ratio between the K factors of the two transistors.
That's right! Always relate output and reference currents through their K values while factoring in the early voltage. Letβs see this in action through a practical example.
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Now, letβs turn our attention to BJT current mirrors. How does their functioning differ from that of MOSFETs in terms of early voltage?
I think BJT mirrors have base currents that can affect the overall current output.
Exactly, base currents introduce non-ideality factors. Remember that E.V. is just as important here in BJTs to account for the output characteristics. Can anyone illustrate how to compute these factors?
We should factor in the beta of the transistors and the early voltage to get the accurate output value.
Correct again! Letβs remember to always calculate the non-ideality factor and its effect on output current, especially with differing early voltage characteristics.
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Finally, why do you think knowing about early voltage and current mirrors is critical for circuit designers?
It helps us design more efficient circuits with predictable behavior under different loads.
Absolutely! Predicting performance under various conditions ensures our designs are reliable. Remember, early voltage can seem small, but its impact is profound. Can someone summarize our discussions?
We learned about the role of early voltage in both MOSFET and BJT current mirrors, how to calculate output currents, and its importance in maintaining circuit performance.
Excellent summary! Letβs move forward by applying these concepts in exercises.
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The section explores the importance of early voltage in transistor circuits, particularly in current mirrors, highlighting its impact on output current and circuit performance. Examples illustrating calculations for MOSFET and BJT current mirrors showcase its significance.
The early voltage is a crucial parameter in transistor circuits that indicates how much the output current can increase as a result of an increase in the output voltage. In this section, we delve into various types of current mirrors constructed using MOSFETs and BJTs.
Key Concepts Covered:
1. Current Mirrors: Simple and precision-based designs, and transitions between MOSFET and BJT configurations.
2. Numerical Examples: Calculations are provided to demonstrate how to derive output currents based on varying input parameters, emphasizing how output currents vary with early voltage considerations.
3. Practical Applications: Understanding early voltage helps in predicting the performance of amplifiers and precision applications.
The impact of early voltage may seem nominal, but it plays a crucial role when designing circuits for precision applications where small changes in current can lead to substantial performance variations.
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So, here we do have the example circuit where M1 and M2 are forming current mirror. We do have a reference current here and then we do have the application circuit here. So in this example, the K factor for transistor-1 is given as 1 mA/VΒ², and for transistor-2 it is given as 4 mA/VΒ². Let us assume that both the transistors have equal threshold voltage of 1.5 V and the reference current is 0.5 mA with a supply voltage of 12 V.
A current mirror is a circuit configuration that produces a copy of a reference current. In this case, transistors M1 and M2 are used to form a current mirror. The reference current is provided, and the goal is to have M2 replicate this current based on its characteristics defined by its K factor. The K factor (1 mA/VΒ² for M1 and 4 mA/VΒ² for M2) indicates how the current varies with voltage in each transistor. Additionally, the threshold voltage (1.5 V in this case) is the minimum gate-source voltage needed for the transistor to conduct. The configuration aims to ensure that M2 can adequately copy the reference current under specified conditions.
Think of the current mirror as a parent teaching a child to copy their behavior. The parent (transistor M1) establishes a reference behavior (current), much like giving the child a set of rules or actions to follow, while the child (transistor M2) tries to imitate this behavior as closely as possible according to their own unique traits (K factor).
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To start with, letβs consider a simpler version, ignoring the lambda effect, and calculate VGS1 and IDS2. Note that I_DS is the same as I_REF, which is 0.5 mA. However, since the K of the two transistors is different, we expect IDS2 to be different. We start with calculations for VGS1: VGS1 = Vth1 + 1, which comes to 2.5 V. This VGS1 is then applied to transistor-2 to calculate its corresponding current, resulting in IDS2 being 2 mA.
In calculating the output current (IDS2), we first determine the gate-source voltage for transistor M1 (VGS1) and find it to be 2.5 V. This voltage is then used for calculations related to transistor M2. Since the K factors are different, we expect a different output current to flow through M2. After applying the necessary formulas, we find that IDS2 equals 2 mA, highlighting how the characteristics of each transistor influence the output current.
Consider baking cookies where M1 is a recipe that sets the standard for the size (like the reference current), and each subsequent batch of cookies (M2) tries to replicate that size but may differ due to variations in ingredient quality (the K factors). Just like how different ovens can cook to varying sizes despite the same recipe, the output current can differ based on the unique properties of each transistor.
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To ensure that transistor-2 operates in saturation, its drain voltage must be higher than its gate voltage minus the threshold voltage: V_DS(min) = VGS - Vth. Given VGS is 2.5 V, and Vth is 1.5 V, it gives us a minimum requirement of V_DS(min) = 1 V for proper operation.
For a transistor to work effectively as a current mirror, it needs to be in saturation, meaning it is fully on, and the current is stable. The relationship between the gate-source voltage, the threshold voltage, and the drain-source voltage must be satisfied to keep the transistor in saturation. Here, we calculate that V_DS(min) must be at least 1 V, ensuring that transistor M2 can accurately mirror the current from M1 without falling into the triode region.
Imagine a faucet representing the transistor. To ensure a consistent flow (saturation), the water pressure (V_DS) needs to be higher than the height of the pipe's opening (which is the difference between the gate voltage and threshold). If the water pressure is too low, the flow becomes inconsistent, just as a transistor can behave unpredictably if itβs not adequately biased.
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To calculate the small signal output resistance R_out of the current mirror, we evaluate the slope of the output current versus the drain-source voltage. For the current values calculated at different voltages, the resistance can be found by the formula: R_out = ΞV / ΞI. With ΞV being the change in drain-source voltage and ΞI the change in output current.
The output resistance of a current mirror represents how well it can maintain a constant output current despite variations in output voltage. By measuring how much current changes for a given change in voltage (ΞI/ΞV), we can find the small signal output resistance (R_out). This is crucial in ensuring the mirror behaves predictably in a circuit.
Think of a bridge that needs to remain stable regardless of how many cars (current) travel over it. The number of cars must not affect the stability of the bridge (output resistance). In our case, if a few extra cars donβt sway the bridge significantly (small changes in output current), we can say the bridge is well-designed (high output resistance).
Learn essential terms and foundational ideas that form the basis of the topic.
Key Concepts
Current Mirror: A circuit that replicates a current while maintaining the same value under fluctuating conditions.
Early Voltage: The parameter influencing the output current's response to voltage changes, thus vital for transistor operation.
See how the concepts apply in real-world scenarios to understand their practical implications.
Example 1: When assessing a simple MOSFET current mirror, with known K factors, calculate the output current given a reference current of 0.5 mA.
Example 2: In a BJT current mirror with base current considerations, derive the output current while factoring in the early voltage and base current losses.
Use mnemonics, acronyms, or visual cues to help remember key information more easily.
Early voltage climbs, as current shines, keeping circuits fine over time.
Imagine a gardener watching how different plants grow; early voltage is like the sun that ensures every plant gets just the right amount of light, helping them grow strong.
Remember E.V. means Early Voltage impacts Output Values.
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Review the Definitions for terms.
Term: Early Voltage
Definition:
A parameter that quantifies how much the output current increases as the output voltage is raised, influencing transistor performance.
Term: Current Mirror
Definition:
An analog circuit that replicates a current flowing in one active device to another, maintaining consistent current despite changing conditions.
Term: MOSFET
Definition:
Metal-Oxide-Semiconductor Field-Effect Transistor, a type of FET used for switching and amplifying electronic signals.
Term: BJT
Definition:
Bipolar Junction Transistor, a type of transistor that uses both electron and hole charge carriers.
Term: K factor
Definition:
A constant related to the transconductance of a transistor, used in determining current output in current mirrors.