Performance Enhancement And Scaling Down Technologies

This section discusses the advancements in semiconductor performance enhancement and scaling technologies, covering innovative techniques to maintain efficiency and speed as transistors shrink beyond traditional limits.

Introduction

This section outlines the advancements in semiconductor device performance resulting from scaling down device dimensions, emphasizing the transition from traditional technologies to innovative materials and structures.

Problem Statement

As semiconductor nodes scale below 7nm, traditional technology faces significant challenges such as short-channel effects, increased leakage currents, and limitations in interconnect performance.

Step 1: Device Performance Enhancement Techniques

This section covers techniques for enhancing semiconductor device performance, including strain engineering and alternative gate materials.

Strain Engineering

Strain engineering is a technique that improves semiconductor carrier mobility by applying mechanical stress to the channel.

High-K / Metal Gate (Hkmg) Stack

The High-k / Metal Gate (HKMG) stack replaces traditional silicon dioxide with high-k dielectrics to improve performance and reduce leakage in advanced semiconductor devices.

Low-Resistance Contacts

Low-resistance contacts use advanced materials to improve electrical contact at nanoscale semiconductor devices.

Backside Power Delivery Networks (Bspdn)

Backside Power Delivery Networks (BSPDN) enhance power efficiency and signal integrity in advanced semiconductor chips by routing power from the wafer back.

Step 2: Scaling Down Technologies

This section examines various cutting-edge technologies for scaling down semiconductor devices, highlighting advancements beyond traditional methods.

Finfet (Tri-Gate Transistors)

FinFETs are 3D transistors that enhance electrostatic control and performance at scales below 22nm, addressing leakage and drive current challenges.

Gate-All-Around Fets (Gaafet)

Gate-All-Around FETs (GAAFET) enhance gate control in transistors by surrounding the channel, enabling better performance at advanced nodes like 3nm.

2d Materials And Monolayer Channels

This section discusses the significance of 2D materials and monolayer channels in modern semiconductor technology, highlighting their advantages over traditional materials.

3d Integration And Chiplets

3D integration and chiplets are essential technologies for enhancing semiconductor performance through vertical stacking and heterogeneous integration.

Step 3: Advanced Lithography For Scaling

This section outlines advanced lithography techniques, focusing on EUV Lithography and other methods facilitating semiconductor scaling to nodes below 7nm.

Step 4: Simulation – Performance Vs Node Size

This section examines the interrelationship between performance attributes such as drive current and leakage current as technology node sizes decrease in semiconductor devices.

Step 5: Beyond Scaling – “more-Than-Moore” Approaches

This section discusses advanced semiconductor technologies that expand performance capabilities beyond traditional scaling methods.

Neuromorphic Chips

Neuromorphic chips are advanced computing devices designed to imitate the anatomical and functional aspects of the human brain, particularly using memristors and synaptic logic to enhance processing efficiency.

Quantum Devices

Quantum devices leverage quantum states for advanced computing capabilities that surpass traditional binary logic systems.

Photonic Circuits

Photonic circuits utilize light instead of electrons to transmit data, potentially revolutionizing speed and efficiency in data processing.

Heterogeneous Integration

Heterogeneous integration involves the combination of different technologies within a single chip to enhance functionality and performance, critical as we transition to increasingly complex semiconductor designs.

Analysis And Observations

The section discusses the evolution of semiconductor scaling, emphasizing that performance now relies on advanced materials, 3D structures, and system-level integration rather than solely physical scaling.

Conclusion

The conclusion highlights the need for radical innovations in semiconductor performance enhancement as traditional scaling approaches their limits.