9. Performance Enhancement and Scaling Down Technologies - Advanced Semiconductor Manufacturing
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9. Performance Enhancement and Scaling Down Technologies

9. Performance Enhancement and Scaling Down Technologies

Semiconductor device performance has improved through continuous scaling down of device dimensions, which is driven by Moore's Law. To overcome challenges like short-channel effects and rising leakage currents, new enhancement techniques and scaling innovations are employed. These advancements focus on innovative materials, architecture, and system integration that extend beyond traditional methods of scaling.

22 sections

Sections

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  1. 9
    Performance Enhancement And Scaling Down Technologies

    This section discusses the advancements in semiconductor performance...

  2. 9.1
    Introduction

    This section outlines the advancements in semiconductor device performance...

  3. 9.2
    Problem Statement

    As semiconductor nodes scale below 7nm, traditional technology faces...

  4. 9.3
    Step 1: Device Performance Enhancement Techniques

    This section covers techniques for enhancing semiconductor device...

  5. 9.3.1
    Strain Engineering

    Strain engineering is a technique that improves semiconductor carrier...

  6. 9.3.2
    High-K / Metal Gate (Hkmg) Stack

    The High-k / Metal Gate (HKMG) stack replaces traditional silicon dioxide...

  7. 9.3.3
    Low-Resistance Contacts

    Low-resistance contacts use advanced materials to improve electrical contact...

  8. 9.3.4
    Backside Power Delivery Networks (Bspdn)

    Backside Power Delivery Networks (BSPDN) enhance power efficiency and signal...

  9. 9.4
    Step 2: Scaling Down Technologies

    This section examines various cutting-edge technologies for scaling down...

  10. 9.4.1
    Finfet (Tri-Gate Transistors)

    FinFETs are 3D transistors that enhance electrostatic control and...

  11. 9.4.2
    Gate-All-Around Fets (Gaafet)

    Gate-All-Around FETs (GAAFET) enhance gate control in transistors by...

  12. 9.4.3
    2d Materials And Monolayer Channels

    This section discusses the significance of 2D materials and monolayer...

  13. 9.4.4
    3d Integration And Chiplets

    3D integration and chiplets are essential technologies for enhancing...

  14. 9.5
    Step 3: Advanced Lithography For Scaling

    This section outlines advanced lithography techniques, focusing on EUV...

  15. 9.6
    Step 4: Simulation – Performance Vs Node Size

    This section examines the interrelationship between performance attributes...

  16. 9.7
    Step 5: Beyond Scaling – “more-Than-Moore” Approaches

    This section discusses advanced semiconductor technologies that expand...

  17. 9.7.1
    Neuromorphic Chips

    Neuromorphic chips are advanced computing devices designed to imitate the...

  18. 9.7.2
    Quantum Devices

    Quantum devices leverage quantum states for advanced computing capabilities...

  19. 9.7.3
    Photonic Circuits

    Photonic circuits utilize light instead of electrons to transmit data,...

  20. 9.7.4
    Heterogeneous Integration

    Heterogeneous integration involves the combination of different technologies...

  21. 9.8
    Analysis And Observations

    The section discusses the evolution of semiconductor scaling, emphasizing...

  22. 9.9

    The conclusion highlights the need for radical innovations in semiconductor...

What we have learnt

  • Performance enhancement of semiconductor devices relies on innovative scaling technologies and new materials.
  • Short-channel effects and rising leakage currents present significant challenges for nodes below 7nm.
  • Advanced techniques such as FinFETs, GAAFETs, and 3D integration are crucial for maintaining performance at smaller nodes.

Key Concepts

-- Moore's Law
Observation that the number of transistors on a microchip doubles approximately every two years, leading to increased performance and decreased costs.
-- ShortChannel Effects
Deterioration of the electrical characteristics of transistors as their dimensions scale down, particularly affecting control of the channel.
-- GAAFET
Gate-All-Around Field Effect Transistor, a type of transistor that improves control by surrounding the channel with the gate.
-- EUV Lithography
Extreme Ultraviolet Lithography, a cutting-edge technology that employs short wavelengths of light for etching ultra-small patterns on chips.
-- MorethanMoore
An approach that integrates functionalities such as analog, digital, memory, and sensors in a way that deviates from traditional scaling by focusing on system-level solutions.

Additional Learning Materials

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