4. Etching and Deposition Processes
The chapter presents a comprehensive overview of etching and deposition processes critical to semiconductor manufacturing. It outlines various etching mechanisms, equipment used for both deposition and etching, and specific methods such as Atomic Layer Deposition (ALD) and Reactive Ion Etching (RIE). The significance of achieving precise patterns and material integration challenges is emphasized as the industry moves towards increasingly complex nanostructures.
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What we have learnt
- Etching and deposition are crucial processes in creating integrated circuits.
- Both etching and deposition must meet precision and uniformity standards for successful semiconductor fabrication.
- Different techniques are employed for etching and deposition based on material properties and desired outcomes.
Key Concepts
- -- Etching
- A process that selectively removes materials to create patterns on a semiconductor surface.
- -- Deposition
- A process that involves depositing thin layers of material onto a substrate in semiconductor fabrication.
- -- Atomic Layer Deposition (ALD)
- A technique that deposits thin films with atomic precision through self-limiting surface reactions.
- -- Reactive Ion Etching (RIE)
- A dry etching technique that combines plasma and directional ion bombardment for precise material removal.
- -- Selectivity
- The ability to remove a specific material without affecting others during the etching process.
- -- Anisotropy
- The directional quality of etching that enables the creation of vertical profiles in semiconductor structures.
Additional Learning Materials
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