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The chapter presents a comprehensive overview of etching and deposition processes critical to semiconductor manufacturing. It outlines various etching mechanisms, equipment used for both deposition and etching, and specific methods such as Atomic Layer Deposition (ALD) and Reactive Ion Etching (RIE). The significance of achieving precise patterns and material integration challenges is emphasized as the industry moves towards increasingly complex nanostructures.
References
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Memorization
What we have learnt
Final Test
Revision Tests
Term: Etching
Definition: A process that selectively removes materials to create patterns on a semiconductor surface.
Term: Deposition
Definition: A process that involves depositing thin layers of material onto a substrate in semiconductor fabrication.
Term: Atomic Layer Deposition (ALD)
Definition: A technique that deposits thin films with atomic precision through self-limiting surface reactions.
Term: Reactive Ion Etching (RIE)
Definition: A dry etching technique that combines plasma and directional ion bombardment for precise material removal.
Term: Selectivity
Definition: The ability to remove a specific material without affecting others during the etching process.
Term: Anisotropy
Definition: The directional quality of etching that enables the creation of vertical profiles in semiconductor structures.