3. Crystal Structures and Properties of Compound Semiconductors
The chapter delves into the crystal structures of compound semiconductors and their distinct properties compared to elemental semiconductors like silicon. It highlights the role these structures play in influencing crucial characteristics such as bandgap type, carrier mobility, and thermal properties. The discussion encompasses various crystalline forms including Zinc Blende and Wurtzite, as well as methods for crystal growth, ultimately emphasizing the unique applications enabled by these materials in high-efficiency devices.
Sections
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What we have learnt
- Crystal structure significantly impacts the performance characteristics of semiconductors.
- Compound semiconductors typically exhibit direct bandgaps and higher mobilities compared to elemental semiconductors.
- Different crystal growth methods are essential for producing high-quality compound semiconductor materials.
Key Concepts
- -- Zinc Blende
- A cubic crystal structure characterized by tetrahedral bonding and a direct bandgap, commonly found in materials like GaAs and InP.
- -- Wurtzite
- A hexagonal crystal structure with unique piezoelectric properties and wide direct bandgaps, prevalent in materials such as GaN and ZnO.
- -- Bandgap
- The energy difference between the valence band and the conduction band in semiconductors, determining their electrical and optical properties.
- -- MOCVD
- Metal-Organic Chemical Vapor Deposition, a technique used for the growth of epitaxial semiconductor layers, providing precision in layer thickness.
Additional Learning Materials
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