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The chapter delves into the crystal structures of compound semiconductors and their distinct properties compared to elemental semiconductors like silicon. It highlights the role these structures play in influencing crucial characteristics such as bandgap type, carrier mobility, and thermal properties. The discussion encompasses various crystalline forms including Zinc Blende and Wurtzite, as well as methods for crystal growth, ultimately emphasizing the unique applications enabled by these materials in high-efficiency devices.
References
eepe-cs3.pdfClass Notes
Memorization
What we have learnt
Final Test
Revision Tests
Term: Zinc Blende
Definition: A cubic crystal structure characterized by tetrahedral bonding and a direct bandgap, commonly found in materials like GaAs and InP.
Term: Wurtzite
Definition: A hexagonal crystal structure with unique piezoelectric properties and wide direct bandgaps, prevalent in materials such as GaN and ZnO.
Term: Bandgap
Definition: The energy difference between the valence band and the conduction band in semiconductors, determining their electrical and optical properties.
Term: MOCVD
Definition: Metal-Organic Chemical Vapor Deposition, a technique used for the growth of epitaxial semiconductor layers, providing precision in layer thickness.