4. Device Physics of Compound Semiconductors
Compound semiconductors demonstrate distinct advantages over silicon in device physics, primarily due to their unique material characteristics such as direct bandgap and high carrier mobility. This chapter explores various compound semiconductor devices including LEDs, laser diodes, and HEMTs, detailing their operating principles and applications. The chapter concludes with a discussion on the advanced effects and performance comparisons of different semiconductor types.
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What we have learnt
- Compound semiconductors outperform silicon in speed, light emission, and high-power handling.
- Direct bandgap materials allow efficient photon emission, crucial for optoelectronic applications.
- High electron mobility and specific structural properties of compound semiconductors enable advanced technological applications.
Key Concepts
- -- Direct vs. Indirect Bandgap
- Direct bandgap materials, like GaN, allow efficient electron-hole recombination for photon emission, while indirect bandgap materials, like silicon, are inefficient for optoelectronic applications.
- -- Carrier Mobility
- Refers to how quickly charge carriers can move through a semiconductor when subjected to an electric field; high mobility allows for faster device operation.
- -- High Electron Mobility Transistors (HEMTs)
- Devices that utilize heterojunction technology to achieve high-speed switching capabilities and are widely used in high-frequency applications.
- -- Quantum Confinement
- A phenomenon observed in quantum wells and dots where charge carriers are confined in a small dimension, enabling unique electronic and optical properties and applications in advanced photonic devices.
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