Compound Semiconductors | 4. Device Physics of Compound Semiconductors by Pavan | Learn Smarter
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4. Device Physics of Compound Semiconductors

Compound semiconductors demonstrate distinct advantages over silicon in device physics, primarily due to their unique material characteristics such as direct bandgap and high carrier mobility. This chapter explores various compound semiconductor devices including LEDs, laser diodes, and HEMTs, detailing their operating principles and applications. The chapter concludes with a discussion on the advanced effects and performance comparisons of different semiconductor types.

Sections

  • 4

    Device Physics Of Compound Semiconductors

    This section explores the unique properties of compound semiconductors and how these enable superior performance in devices compared to silicon.

    Learning Practice

  • 4.1

    Introduction

    Compound semiconductors exhibit unique device physics characteristics that make them superior to silicon in many applications.

    Learning Practice

  • 4.2

    Problem Statement

    Compound semiconductors outperform silicon in certain applications due to specific material characteristics.

    Learning Practice

  • 4.3

    Key Concepts In Compound Semiconductor Device Physics

    This section explores essential concepts in compound semiconductor device physics, emphasizing direct versus indirect bandgaps, carrier mobility, saturation velocity, and polarization effects.

    Learning Practice

  • 4.3.1

    Direct Vs. Indirect Bandgap

    This section differentiates between direct and indirect bandgaps in semiconductors, focusing on their significance in device applications.

    Learning Practice

  • 4.3.2

    Carrier Mobility And Saturation Velocity

    This section explains the significance of carrier mobility and saturation velocity in compound semiconductors, highlighting their roles in device performance and efficiency.

    Learning Practice

  • 4.3.3

    Polarization Effects (Spontaneous + Piezoelectric)

    This section discusses polarization effects in compound semiconductors, specifically spontaneous and piezoelectric polarization, their implications in device structures like HEMTs, and how they contribute to achieving high electron mobility.

    Learning Practice

  • 4.4

    Important Device Structures In Compound Semiconductors

    This section highlights key device structures in compound semiconductors, including their materials, operating principles, benefits, and applications.

    Learning Practice

  • 4.4.1

    Light Emitting Diodes (Leds)

    Light Emitting Diodes (LEDs) leverage direct bandgap materials to emit light efficiently when electrons and holes recombine.

    Learning Practice

  • 4.4.2

    Laser Diodes

    Laser diodes are semiconductor devices that emit coherent light via stimulated emission, playing a crucial role in various applications.

    Learning Practice

  • 4.4.3

    High Electron Mobility Transistors (Hemts)

    HEMTs are advanced transistors that utilize the unique properties of compound semiconductors to achieve high-speed, high-frequency performance.

    Learning Practice

  • 4.4.4

    Photodetectors And Solar Cells

    This section discusses photodetectors and solar cells made from compound semiconductors, emphasizing their efficiency and tunable bandgaps.

    Learning Practice

  • 4.5

    Comparison Of Device Physics: Silicon Vs. Compound Semiconductors

    This section compares the device physics of silicon and compound semiconductors, highlighting their differences in bandgap type, carrier mobility, speed, light emission, and other key parameters.

    Learning Practice

  • 4.6

    Advanced Device Effects In Compound Semiconductors

    This section discusses advanced device effects in compound semiconductors, including quantum confinement, tunneling, and avalanche breakdown.

    Learning Practice

  • 4.6.1

    Quantum Confinement

    Quantum confinement refers to the phenomenon where charge carriers are confined to a very small spatial region, leading to quantized energy levels and unique electronic properties.

    Learning Practice

  • 4.6.2

    Tunneling And Resonant Tunneling

    Tunneling and resonant tunneling in compound semiconductors enable ultrafast logic devices due to their unique properties, including small effective masses.

    Learning Practice

  • 4.6.3

    Avalanche Breakdown

    Avalanche breakdown in wide-bandgap semiconductors like SiC and GaN allows for improved control and application in high-voltage devices.

    Learning Practice

  • 4.7

    Summary Of Compound Semiconductor Device Types

    This section outlines the various types of compound semiconductor devices, their common materials, and primary application areas.

    Learning Practice

  • 4.8

    Conclusion

    The conclusion emphasizes the superiority of compound semiconductors over silicon in various applications due to their unique properties.

    Learning Practice

References

eepe-cs4.pdf

Class Notes

Memorization

What we have learnt

  • Compound semiconductors out...
  • Direct bandgap materials al...
  • High electron mobility and ...

Final Test

Revision Tests