7. Fabrication Techniques for Compound Semiconductors
The chapter discusses the fabrication techniques essential for compound semiconductors, focusing notably on epitaxial growth methods such as MOCVD and MBE. It highlights the significance of layer-by-layer deposition in achieving optimal electrical and optical properties in devices, along with associated challenges and emerging technologies. The chapter concludes by emphasizing the advancements that facilitate the scalability of compound semiconductor fabrication.
Sections
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What we have learnt
- Precise control over atomic composition and layer thickness is critical in compound semiconductor fabrication.
- Epitaxial growth methods such as MOCVD and MBE are central to producing high-performance optoelectronic devices.
- Challenges such as thermal expansion mismatch and contamination must be managed to ensure high-quality fabrication.
Key Concepts
- -- Epitaxial Growth
- A deposition technique to grow crystalline layers on a substrate, key for achieving desired semiconductor characteristics.
- -- MOCVD
- Metal-Organic Chemical Vapor Deposition is an epitaxial growth technique that uses metal-organic precursors for layer formation at high temperatures.
- -- MBE
- Molecular Beam Epitaxy is an ultra-high vacuum deposition process that allows for atomic-level control of layer growth.
- -- Lattice Matching
- The process of aligning the crystal structure of the substrate with that of the epitaxial layer to minimize defects.
- -- Doping
- The intentional introduction of impurities into a semiconductor to change its electrical properties.
Additional Learning Materials
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