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CMOS devices, crucial for modern integrated circuits, operate through complementary NMOS and PMOS transistors, ensuring low static power consumption. This chapter examined their behaviors, including I-V characteristics and operational regions, while exploring the significance of CMOS inverters, threshold voltage variations, and practical concerns in design. Key phenomena such as channel-length modulation and subthreshold operation play vital roles in device performance and efficiency.
References
ee5-cmos-2.pdfClass Notes
Memorization
What we have learnt
Final Test
Revision Tests
Term: NMOS Transistor
Definition: A type of MOSFET that conducts current when a positive gate-source voltage is applied.
Term: PMOS Transistor
Definition: A type of MOSFET that conducts current when a negative gate-source voltage is applied.
Term: CMOS Inverter
Definition: A circuit configuration that uses NMOS and PMOS to invert the input signal, facilitating efficient logic operation.
Term: ChannelLength Modulation
Definition: A phenomenon where the effective length of the MOSFET channel changes with the drain-source voltage, affecting conductivity.
Term: Subthreshold Operation
Definition: The condition when a small current flows through the MOSFET even when the gate-source voltage is below the threshold voltage, allowing low-power applications.
Term: Threshold Voltage (Vth)
Definition: The minimum gate voltage that must be exceeded to create a conductive channel in a MOSFET.