Detailed Summary
Intrinsic semiconductors like silicon (Si) and germanium (Ge) are characterized by their four valence electrons, which they share covalently with four nearest neighbors in their diamond-like crystal structure. At absolute zero, intrinsic semiconductors behave like insulators with no free charge carriers. As the temperature rises, thermal energy provides sufficient energy for a small number of valence electrons to break free from their covalent bonds, leading to the creation of electron-hole pairs. The number of free electrons equals the number of holes, indicating a balance in charge carrier generation. Thus, intrinsic carrier concentration becomes essential in determining the electrical properties of these semiconductors. While intrinsic semiconductors have limited conductivity at room temperature, they serve as a foundational basis for understanding more complex semiconductor behaviors, particularly when doping is introduced in later sections.