Overview
The p-n junction diode operates distinctly under reverse bias conditions. When reverse biased, the diode is connected such that the n-side is at a higher potential compared to the p-side, resulting in crucial changes to the diode's behavior.
Key Points
- Barrier Potential: The applied reverse voltage increases the barrier potential, which prevents current from flowing easily across the junction.
- Depletion Region: The widening of the depletion region under reverse bias leads to a further reduction in the flow of charge carriers, specifically blocking majority carriers while allowing only minimal current due to minority carriers.
- Current Flow: The current observed under reverse bias is primarily due to the drift of minority carriers, making it significantly lower than in forward bias conditions.
- Reverse Current Characteristics: The reverse current remains relatively constant until a critical reverse bias voltage, known as breakdown voltage, is reached. Beyond this point, the current can increase dramatically, risking damage to the diode if not controlled.
Significance
Understanding the reverse bias characteristics of p-n junction diodes is essential as it lays the groundwork for their applications in circuits, especially in rectification and protection circuits against overvoltages.