When a semiconductor diode is forward biased, the p-side is connected to the positive terminal and the n-side to the negative terminal of the voltage source. This configuration causes the voltage to mostly drop across the depletion region, which has high resistance. Consequently, the depletion region's width decreases, and the effective barrier height is reduced. If the voltage is low, few carriers may cross the junction, leading to a small current; if it is sufficiently high, more carriers can overcome the barrier, increasing current significantly. This behavior demonstrates the diode's rectifying property, allowing current to flow primarily in one direction, a fundamental characteristic that underpins the operation of many electronic devices.