n-type Semiconductor
Introduction
An n-type semiconductor is created when silicon (Si) or germanium (Ge) is doped with pentavalent atoms such as arsenic (As), phosphorus (P), or antimony (Sb).
Doping Process
- Pentavalent Elements: These elements have five valence electrons, which allow them to bond with surrounding silicon atoms while leaving one electron loosely bound to it.
- Ionization Energy: The effective ionization energy for these extrinsic electrons is very small (~0.01 eV for Ge and ~0.05 eV for Si), allowing the electron to become a free charge carrier at room temperature.
Charge Carriers
- Majority Carriers: In n-type semiconductors, electrons become the majority charge carriers, whereas holes are the minority carriers. This doping can lead to a situation where the concentration of electrons far exceeds that of holes.
- Concentration Dependence: The number of electrons available for conduction is directly related to the doping level, which does not significantly change with temperature, leading to a stable behavior in electronic applications.
Conclusion
Understanding the properties of n-type semiconductors is critical as they play a pivotal role in creating various electronic components, such as diodes and transistors, which exploit these additional free electrons to facilitate current flow.