Practice p-n junction formation - 14.5.1 | 14. SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS | CBSE 12 Physics Part 2
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p-n junction formation

14.5.1 - p-n junction formation

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Practice Questions

Test your understanding with targeted questions

Question 1 Easy

What is a p-n junction?

💡 Hint: Think about the types of semiconductor materials.

Question 2 Easy

What causes the diffusion current?

💡 Hint: Remember how particles behave in a concentration gradient.

4 more questions available

Interactive Quizzes

Quick quizzes to reinforce your learning

Question 1

What is the result of the diffusion process in a p-n junction?

Creation of free holes
Formation of depletion region
Decrease in potential barrier

💡 Hint: Think about the overall changes at the junction.

Question 2

True or False: The drift current is always greater than the diffusion current in a p-n junction.

True
False

💡 Hint: Consider what happens when both currents start interacting.

1 more question available

Challenge Problems

Push your limits with advanced challenges

Challenge 1 Hard

Consider a p-n junction diode with a large applied forward voltage. Explain the expected behavior of the current and what it indicates about the state of the junction.

💡 Hint: Focus on the relationship between voltage and current in a diode.

Challenge 2 Hard

Calculate the thickness of the depletion region if the concentration of dopants in the n-side is 10^15/cm^3 and in the p-side is 5x10^14/cm^3. Assume ideal conditions.

💡 Hint: Look at the relationships between doping levels and depletion width.

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